Resin-bonded Al-SiC composite was sintered at 1100,1300,and 1500℃ in the air,the oxidation mechanism was investigated.The reaction models were also established.The oxidation resistance of the Al-SiC composite was sig...Resin-bonded Al-SiC composite was sintered at 1100,1300,and 1500℃ in the air,the oxidation mechanism was investigated.The reaction models were also established.The oxidation resistance of the Al-SiC composite was significantly enhanced with temperature increase.SiC in the exterior of the composite was partially oxidized slightly,while the transformation of metastable Al_(4)C_(3) to stable Al_(4)SiC_(4) existed in the interior.At 1100℃,Al in the interior reacted with residual C to form Al_(4)C_(3).With increasing to 1300℃,high temperature and low oxygen partial pressure lead to active oxidation of SiC,and internal gas composition transforms to Al_(2)O(g)+CO(g)+SiO(g)as the reaction proceeds.After Al_(4)C_(3) is formed,CO(g)and SiO(g)are continuously deposited on its surface,transforming to Al_(4)SiC_(4).At 1500℃,a dense layer consisting of SiC and Al_(4)SiC_(4) whiskers is formed which cuts off the diffusion channel of oxygen.The active oxidation of SiC is accelerated,enabling more gas to participate in the synthesis of Al_(4)SiC_(4),eventually forming hexagonal lamellar Al_(4)SiC_(4) with mutual accumulation between SiC particles.Introducing Al enhances the oxidation resistance of SiC.In addition,the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.展开更多
基金supported by the National Key Research and Development Program of China(No.2021YFB3701400).
文摘Resin-bonded Al-SiC composite was sintered at 1100,1300,and 1500℃ in the air,the oxidation mechanism was investigated.The reaction models were also established.The oxidation resistance of the Al-SiC composite was significantly enhanced with temperature increase.SiC in the exterior of the composite was partially oxidized slightly,while the transformation of metastable Al_(4)C_(3) to stable Al_(4)SiC_(4) existed in the interior.At 1100℃,Al in the interior reacted with residual C to form Al_(4)C_(3).With increasing to 1300℃,high temperature and low oxygen partial pressure lead to active oxidation of SiC,and internal gas composition transforms to Al_(2)O(g)+CO(g)+SiO(g)as the reaction proceeds.After Al_(4)C_(3) is formed,CO(g)and SiO(g)are continuously deposited on its surface,transforming to Al_(4)SiC_(4).At 1500℃,a dense layer consisting of SiC and Al_(4)SiC_(4) whiskers is formed which cuts off the diffusion channel of oxygen.The active oxidation of SiC is accelerated,enabling more gas to participate in the synthesis of Al_(4)SiC_(4),eventually forming hexagonal lamellar Al_(4)SiC_(4) with mutual accumulation between SiC particles.Introducing Al enhances the oxidation resistance of SiC.In addition,the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.
