While the demand for deep ultraviolet(DUV)light sources is rapidly growing,the efficiency of current AlGaN-based DUV light-emitting diodes(LEDs)remains very low due to their fundamentally limited light-extraction effi...While the demand for deep ultraviolet(DUV)light sources is rapidly growing,the efficiency of current AlGaN-based DUV light-emitting diodes(LEDs)remains very low due to their fundamentally limited light-extraction efficiency(LEE),calling for a novel LEE-enhancing approach to deliver a real breakthrough.Here,we propose sidewall emission-enhanced(SEE)DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active region and three-dimensional reflectors between the stripes.The SEE DUV LEDs show much enhanced light output power with a strongly upward-directed emission due to the exposed sidewall of the active region and Al-coated selective-area-grown n-type GaN micro-reflectors.The devices also show reduced operating voltage due to better n-type ohmic contact formed on the regrown n-GaN stripes when compared with conventional LEDs.Accordingly,the proposed approach simultaneously improves optical and electrical properties.In addition,strategies to further enhance the LEE up to the theoretical optimum value and control emission directionality are discussed.展开更多
基金The authors gratefully acknowledge the support by the International Collaborative R&D Program of the Korea Institute for Advancement of Technology(KIAT)(M0000078,Development of Deep UV LED Technology for Industry and Medical Application)the Industrial Strategic Technology Development Program(10041878,Development of WPE 75%LED device process and standard evaluation technology)the IT R&D Program(10035598,180 lm W21 High-efficiency Nano-based LEDs)funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea)。
文摘While the demand for deep ultraviolet(DUV)light sources is rapidly growing,the efficiency of current AlGaN-based DUV light-emitting diodes(LEDs)remains very low due to their fundamentally limited light-extraction efficiency(LEE),calling for a novel LEE-enhancing approach to deliver a real breakthrough.Here,we propose sidewall emission-enhanced(SEE)DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active region and three-dimensional reflectors between the stripes.The SEE DUV LEDs show much enhanced light output power with a strongly upward-directed emission due to the exposed sidewall of the active region and Al-coated selective-area-grown n-type GaN micro-reflectors.The devices also show reduced operating voltage due to better n-type ohmic contact formed on the regrown n-GaN stripes when compared with conventional LEDs.Accordingly,the proposed approach simultaneously improves optical and electrical properties.In addition,strategies to further enhance the LEE up to the theoretical optimum value and control emission directionality are discussed.
