The phase formation and thermoelectric(TE)properties in the central region of the Zn−Sb phase diagram were analyzed through synthesizing a series of Zn_(1+x)Sb(x=0,0.05,0.1,0.15,0.25,0.3)materials by reacting Zn and S...The phase formation and thermoelectric(TE)properties in the central region of the Zn−Sb phase diagram were analyzed through synthesizing a series of Zn_(1+x)Sb(x=0,0.05,0.1,0.15,0.25,0.3)materials by reacting Zn and Sb powders below the solidus line of the Zn−Sb binary phase diagram followed by furnace cooling.In this process,the nonstoichiometric powder blend crystallized in a combination of ZnSb andβ-Zn4Sb3 phases.Then,the materials were ground and hot pressed to form dense ZnSb/β-Zn4Sb3 composites.No traces of Sb and Zn elements or other phases were revealed by X-ray diffraction,high resolution transmission electron microscopy and electron energy loss spectroscopy analyses.The thermoelectric properties of all materials could be rationalized as a combination of the thermoelectric behavior of ZnSb andβ-Zn4Sb3 phases,which were dominated by the main phase in each sample.Zn1.3Sb composite exhibited the best thermoelectric performance.It was also found that Ge doping substantially increased the Seebeck coefficient of Zn1.3Sb and led to significantly higher power factor,up to 1.51 mW·m−1·K−2 at 540 K.Overall,an exceptional and stable TE figure of merit(ZT)of 1.17 at 650 K was obtained for Zn1.28Ge0.02Sb.展开更多
We report on a Te-seeded epitaxial growth of ultrathin Bi2Te3 nanoplates （down to three quintuple layers （QL）） with large planar sizes （up to tens of micrometers） through vapor transport. Optical contrast has be...We report on a Te-seeded epitaxial growth of ultrathin Bi2Te3 nanoplates （down to three quintuple layers （QL）） with large planar sizes （up to tens of micrometers） through vapor transport. Optical contrast has been systematically investigated for the as-grown Bi2Te3 nanoplates on the SiO2/Si substrates, experimentally and computationally. The high and distinct optical contrast provides a fast and convenient method for the thickness determination of few-QL Bi2Te3 nanoplates. By aberration-corrected scanning transmission electron microscopy, a hexagonal crystalline structure has been identified for the Te seeds, which form naturally during the growth process and initiate an epitaxial growth of the rhombohedral- structured Bi2Te3 nanoplates. The epitaxial relationship between Te and Bi2T% is identified to be perfect along both in-plane and out-of-plane directions of the layered nanoplate. Similar growth mechanism might be expected for other bismuth chalcogenide layered materials.展开更多
Strain engineering provides an effective mean of tuning the fundamental properties of semiconductors for electric and optoelectronic applications. Here we report on how the applied strain changes the emission properti...Strain engineering provides an effective mean of tuning the fundamental properties of semiconductors for electric and optoelectronic applications. Here we report on how the applied strain changes the emission properties of hetero- structures consisting of different crystalline phases in the same CdS nanobelts. The strained portion was found to produce an additional emission peak on the low-energy side that was blueshifted with increasing strain. Furthermore, the additional emission peak obeyed the Varshni equation with temperature and exhibited the band-filling effect at high excitation power. This new emission peak may be attributed to spatially indirect exciton recombination between different crystalline phases of CdS. First-principles calculations were performed based on the spatially indirect exciton recombination, and the calculated and experimental results agreed with one another. Strain proved to be capable of enhancing the anti-Stokes emission, suggesting that the efficiency of laser cooling may be improved by strain engineering.展开更多
文摘The phase formation and thermoelectric(TE)properties in the central region of the Zn−Sb phase diagram were analyzed through synthesizing a series of Zn_(1+x)Sb(x=0,0.05,0.1,0.15,0.25,0.3)materials by reacting Zn and Sb powders below the solidus line of the Zn−Sb binary phase diagram followed by furnace cooling.In this process,the nonstoichiometric powder blend crystallized in a combination of ZnSb andβ-Zn4Sb3 phases.Then,the materials were ground and hot pressed to form dense ZnSb/β-Zn4Sb3 composites.No traces of Sb and Zn elements or other phases were revealed by X-ray diffraction,high resolution transmission electron microscopy and electron energy loss spectroscopy analyses.The thermoelectric properties of all materials could be rationalized as a combination of the thermoelectric behavior of ZnSb andβ-Zn4Sb3 phases,which were dominated by the main phase in each sample.Zn1.3Sb composite exhibited the best thermoelectric performance.It was also found that Ge doping substantially increased the Seebeck coefficient of Zn1.3Sb and led to significantly higher power factor,up to 1.51 mW·m−1·K−2 at 540 K.Overall,an exceptional and stable TE figure of merit(ZT)of 1.17 at 650 K was obtained for Zn1.28Ge0.02Sb.
文摘We report on a Te-seeded epitaxial growth of ultrathin Bi2Te3 nanoplates （down to three quintuple layers （QL）） with large planar sizes （up to tens of micrometers） through vapor transport. Optical contrast has been systematically investigated for the as-grown Bi2Te3 nanoplates on the SiO2/Si substrates, experimentally and computationally. The high and distinct optical contrast provides a fast and convenient method for the thickness determination of few-QL Bi2Te3 nanoplates. By aberration-corrected scanning transmission electron microscopy, a hexagonal crystalline structure has been identified for the Te seeds, which form naturally during the growth process and initiate an epitaxial growth of the rhombohedral- structured Bi2Te3 nanoplates. The epitaxial relationship between Te and Bi2T% is identified to be perfect along both in-plane and out-of-plane directions of the layered nanoplate. Similar growth mechanism might be expected for other bismuth chalcogenide layered materials.
文摘Strain engineering provides an effective mean of tuning the fundamental properties of semiconductors for electric and optoelectronic applications. Here we report on how the applied strain changes the emission properties of hetero- structures consisting of different crystalline phases in the same CdS nanobelts. The strained portion was found to produce an additional emission peak on the low-energy side that was blueshifted with increasing strain. Furthermore, the additional emission peak obeyed the Varshni equation with temperature and exhibited the band-filling effect at high excitation power. This new emission peak may be attributed to spatially indirect exciton recombination between different crystalline phases of CdS. First-principles calculations were performed based on the spatially indirect exciton recombination, and the calculated and experimental results agreed with one another. Strain proved to be capable of enhancing the anti-Stokes emission, suggesting that the efficiency of laser cooling may be improved by strain engineering.
