We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions...We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.展开更多
We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N...We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N are growth temperature and growth time of the Ga N insertion layer.The root-mean-square roughness of a-plane Ga N is reduced by 75%compared to the sample without the Ga N insertion layer.Meanwhile,the Ga N insertion layer is also beneficial for improving crystal quality.This work provides a simple and effective method to improve the surface morphology of non-polar a-plane Ga N.展开更多
基金Supported by the Scientific Equipment Research Program of Chinese Academy of Sciences under Grant No 2014Y4201449
文摘We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.
基金Supported by the National Natural Science Foundation of China(Grant Nos.11574362 and 61704008)。
文摘We demonstrate that a low-temperature Ga N insertion layer could significantly improve the surface morphology of non-polar a-plane Ga N.The two key factors in improving the surface morphology of non-polar a-plane Ga N are growth temperature and growth time of the Ga N insertion layer.The root-mean-square roughness of a-plane Ga N is reduced by 75%compared to the sample without the Ga N insertion layer.Meanwhile,the Ga N insertion layer is also beneficial for improving crystal quality.This work provides a simple and effective method to improve the surface morphology of non-polar a-plane Ga N.
