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First-Principles Study on Hexagonal WO_3 for HCHO Gas Sensing Application 被引量:1
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作者 Bo-Lin Tang Guo-Hua Jiang +1 位作者 Wen-Xing Chen jun-min wan 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2015年第6期772-780,共9页
The adsorption energy, electronic structure, density of states, and electron population for adsorption of HCHO on the hexagonal WO3 (h-WO3) (001) surfaces were investigated by density functional theory calculation... The adsorption energy, electronic structure, density of states, and electron population for adsorption of HCHO on the hexagonal WO3 (h-WO3) (001) surfaces were investigated by density functional theory calculations. The adsorption energy of HCHO molecule on W and O sites of WO-terminated h-WO3 (001) surface was -0.309 and -0.432 eV compared with the value at -1.936 eV for HCHO molecule on O-terminated h-WO3 (001) surface. According to the calculated results, the adsorption of HCHO on h-WO3 (001) surface was spontaneous with physical adsorption on WO- terminated h-WO3 (001) surface and chemisorption on O-terminated h-WO3 (001) surface. The charge transfer from adsorbed HCHO molecule to WO3 (001) surface was confirmed by the Mulliken population analysis, which suggested the potential application of h-WO3 for HCHO gas detection. 展开更多
关键词 SEMICONDUCTORS Surfaces Crystal structure Electronic structure
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