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Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN 被引量:2
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作者 Ting Zhi Tao Tao +6 位作者 Xiaoyan Liu junjun xue Jin Wang Zhikuo Tao Yi Li Zili Xie Bin Liu 《Journal of Semiconductors》 EI CAS CSCD 2021年第12期52-56,共5页
Plasmonic nanolaser as a new type of ultra-small laser,has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters.Normally,the main problem that need to be solved for p... Plasmonic nanolaser as a new type of ultra-small laser,has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters.Normally,the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses,which leads to the low quality factor.In this work,InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated,where the overlap between SPs and excitons can be enhanced.The lasing threshold is calculated to be~6.36 kW/cm^(2),where the full width at half maximum(FWHM)drops from 27 to 4 nm.And the fast decay time at 502 nm(sharp peak of stimulated lasing)is estimated to be 0.42 ns.Enhanced lasing characters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material,which improve the near field coupling between SPs and excitons.Such plasmonic laser should be useful in data storage applications,biological application,light communication,especially for optoelectronic devices integrated into a system on a chip. 展开更多
关键词 surface plasmon plasmonic laser GaN
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Surface treatment of GaN nanowires for enhanced photoelectrochemical water-splitting
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作者 Wenhao Chen Jian Du +8 位作者 Hanbin Zhang Hancheng Wang Kaicheng Xu Zhujun Gao Jiaming Tong Jin Wang junjun xue Ting Zhi Longlu Wang 《Chinese Chemical Letters》 SCIE CAS CSCD 2024年第9期398-402,共5页
High-efficiency hydrogen production through photoelectrochemical(PEC)water splitting has emerged as a promising solution to address current global energy challenges.Ⅲ-nitride semiconductor photoelectrodes with nanost... High-efficiency hydrogen production through photoelectrochemical(PEC)water splitting has emerged as a promising solution to address current global energy challenges.Ⅲ-nitride semiconductor photoelectrodes with nanostructures have demonstrated great potential in the near future due to their high light absorption,tunable direct band gap,and strong physicochemical stability.However,several issues,including surface trapping centers,surface Fermi level pinning,and surface band bending,need to be addressed.In this work,enhanced photovoltaic properties have been achieved using gallium nitride(GaN)nanowires(NWs)photoelectrodes by adopting an alkaline solution surface treatment method to reduce the surface states.It was found that surface oxides on NWs can be removed by an alkaline solution treatment without changing the surface morphology through X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM)and other characterization methods.These findings provide new insights to the development of high-efficiency photoelectrodes for new energy source applications. 展开更多
关键词 Water splitting Photoelectrochemical cells Gallium nitride Surface treatment Nano-architectures
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Monolayer graphene/GaN heterostructure photodetector with UV‑IR dual‑wavelength photoresponses
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作者 junjun xue Jiaming Tong +5 位作者 Zhujun Gao Zhouyu Chen Haoyu Fang Saisai Wang Ting Zhi Jin Wang 《Frontiers of Optoelectronics》 EI CSCD 2024年第2期61-68,共8页
An ultraviolet-infrared(UV-IR)dual-wavelength photodetector(PD)based on a monolayer(ML)graphene/GaN heterostructure has been successfully fabricated in this work.The ML graphene was synthesized by chemical vapor depos... An ultraviolet-infrared(UV-IR)dual-wavelength photodetector(PD)based on a monolayer(ML)graphene/GaN heterostructure has been successfully fabricated in this work.The ML graphene was synthesized by chemical vapor deposition(CVD)and subsequently transferred onto GaN substrate using polymethylmethacrylate(PMMA).The morphological and optical properties of the as-prepared graphene and GaN were presented.The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current–voltage(I–V)characteristics under dark conditions,and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse.In addition,the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory(DFT)to explore the underlying physical mechanism of the two-dimensional(2D)/three-dimensional(3D)hybrid heterostructure PD device.This work paves the way for the development of innovative GaNbased dual-wavelength optoelectronic devices,offering a potential strategy for future applications in the field of advanced photodetection technology. 展开更多
关键词 Wide bandgap semiconductors GRAPHENE DUAL-WAVELENGTH PHOTODETECTOR
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