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Distance dependence of atomic-resolution near-field imaging on α-Al2O3 (0001) surface with respect to surface photovoltage of silicon probe tip
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作者 junsuke yamanishi Takashi Tokuyama +2 位作者 Yoshitaka Naitoh Yan Jun Li Yasuhiro Sugawara 《Nano Research》 SCIE EI CAS CSCD 2016年第2期530-536,共7页
Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by ... Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by the optical near field on the surface is measured as the electrostatic force. We demonstrated atomicresolution imaging of the near field on the α-Al2O3 (0001) surface of a prism. We investigated the spatial distribution of the near field by scanning at different tip-sample distances and found that the atomic corrugation of the near-field signal was observed at greater distances than that of the atomic force microscopy signal. As the tip-sample distance increased, the normalized signal-to-noise ratio of the near field is in a gradual decline almost twice that of the frequency shift (Δf). 展开更多
关键词 near-field scanning optical microscopy near field surface photovoltage ci-Al2O3 (0001) force detection
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