Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces.Here,we investigated the electronic band structure and carrier transport mec...Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces.Here,we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4(CZTSSe)photovoltaic devices under mechanical stress.Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation.The electronic structure of CZTSSe was deformed with stress as the band gap,valence band edge,and work function changed.Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na.The local open-circuit voltage(VOC)on the bent CZTSSe surface decreased due to limited carrier excitation.The reduction of local VOC occurred larger with convex bending than in concave bending,which is consistent with the degradation of device parameters.This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.展开更多
基金supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF)funded by the Ministry of Education (NRF-2018R1A6A1A03025340)Ministry of Science,Technology,ICT,and Future Planning (NRF-2021R1A2B5B02001961)+1 种基金supported by the program of Phased development of carbon neutral technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Science,ICT (NRF2022M3J1A1064229)supported by the DGIST R&D programs of the Ministry of Science and ICT (22-CoE-ET-01).
文摘Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces.Here,we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4(CZTSSe)photovoltaic devices under mechanical stress.Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation.The electronic structure of CZTSSe was deformed with stress as the band gap,valence band edge,and work function changed.Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na.The local open-circuit voltage(VOC)on the bent CZTSSe surface decreased due to limited carrier excitation.The reduction of local VOC occurred larger with convex bending than in concave bending,which is consistent with the degradation of device parameters.This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.
