High frequency performance limits of graphene field-effect transistors （FETs） down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Kle...High frequency performance limits of graphene field-effect transistors （FETs） down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance （L） and quantum capacitance （C）, which is about 100 GHz-um divided by the gate length.展开更多
文摘High frequency performance limits of graphene field-effect transistors （FETs） down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on-off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance （L） and quantum capacitance （C）, which is about 100 GHz-um divided by the gate length.
