Self-assembled Si/Ge quantum dot (QD) structures have been intensively studied in the last years for potential applications in Si based integrated optoelectronics [1]. For the demand of many technical applications, Ge...Self-assembled Si/Ge quantum dot (QD) structures have been intensively studied in the last years for potential applications in Si based integrated optoelectronics [1]. For the demand of many technical applications, Ge dot superlattices separated by Si can be deposited in order to increase the optical and electronic response. Raman scattering has proven to be an essential technique to characterize Si/Ge superlattices and Si/Ge dot superlattices [2,3,4]. However, most of Raman studies were concentrated on their optical modes of Si/Ge dot superlattices, but few of them were carried out to characterize the detail structural properties of Si/Ge dot superlattice structures. Here, Self-assembled Si/Ge dot multilayers with small, uncorrelated dots fabricated by molecular beam epitaxy in the Stranski-Krastanov growth mode are studied by Raman scattering of folded longitudinal acoustic (FLA) modes.展开更多
文摘Self-assembled Si/Ge quantum dot (QD) structures have been intensively studied in the last years for potential applications in Si based integrated optoelectronics [1]. For the demand of many technical applications, Ge dot superlattices separated by Si can be deposited in order to increase the optical and electronic response. Raman scattering has proven to be an essential technique to characterize Si/Ge superlattices and Si/Ge dot superlattices [2,3,4]. However, most of Raman studies were concentrated on their optical modes of Si/Ge dot superlattices, but few of them were carried out to characterize the detail structural properties of Si/Ge dot superlattice structures. Here, Self-assembled Si/Ge dot multilayers with small, uncorrelated dots fabricated by molecular beam epitaxy in the Stranski-Krastanov growth mode are studied by Raman scattering of folded longitudinal acoustic (FLA) modes.
