We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improve...We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improved by Electron Beam (EB) Cure technology. And also One time cure of stacked Low k is successful without any problem. On integration issue of Low k material, we demonstrated low damage resist strip process by using reducing gas chemistry and clarified mechanism of new Cu corrosion mode during CMP process.展开更多
文摘We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improved by Electron Beam (EB) Cure technology. And also One time cure of stacked Low k is successful without any problem. On integration issue of Low k material, we demonstrated low damage resist strip process by using reducing gas chemistry and clarified mechanism of new Cu corrosion mode during CMP process.
