Trap characterization on GaN Schottky barrier diodes(SBDs)has been carried out using deep-level transient spectroscopy(DLTS).Selective probing by varying the ratio of the rate window values(r)incites different trap si...Trap characterization on GaN Schottky barrier diodes(SBDs)has been carried out using deep-level transient spectroscopy(DLTS).Selective probing by varying the ratio of the rate window values(r)incites different trap signatures at similar temperature regimes.Electron traps are found to be within the values:0.05–1.2 eV from the conduction band edge whereas the hole traps 1.37–2.66 eV from the valence band edge on the SBDs.In the lower temperature regime,the deeper electron traps contribute to the capacitance transients with increasing r values,whereas at the higher temperatures>300 K,a slow variation of the trap levels(both electrons and holes)is observed when r is varied.These traps are found to be mainly contributed to dislocations,interfaces,and vacancies within the structure.展开更多
The role of deposition rate in the structural, optical and electrical properties of SnOthin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz. 50, 75, and 100 W.T...The role of deposition rate in the structural, optical and electrical properties of SnOthin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz. 50, 75, and 100 W.The structural characterization of the films is done by X-ray diffraction(XRD) technique. The surface morphology of the films is studied by scanning electron microscopy(SEM). Rutherford back scattering(RBS) measurements revealed the thickness of the films ranging from 200 nm to 400 and also a change in the concentration of oxygen vacancies which is found to be the maximum in the film deposited at the lowest deposition rate. Optical absorption spectrum is recorded using the UV–V is spectroscopy and the films are found to be transparent in nature. A shift in the absorption edge is observed and is attributed to a different level of allowed energy states in conduction band minimum. The Hall effect and electrical measurements show a variation in the carrier concentrations, mobility and resistivity of the films. In order to explore a better compromise in electrical and optical properties for transparent electrode applications, skin depths calculations are also done to find the optimized values of carrier concentration and mobility.展开更多
基金the financial support received from the Department of Science and Technology,India through DST-INSPIRE Faculty scheme(DST/INSPIRE/04/2015/001572).
文摘Trap characterization on GaN Schottky barrier diodes(SBDs)has been carried out using deep-level transient spectroscopy(DLTS).Selective probing by varying the ratio of the rate window values(r)incites different trap signatures at similar temperature regimes.Electron traps are found to be within the values:0.05–1.2 eV from the conduction band edge whereas the hole traps 1.37–2.66 eV from the valence band edge on the SBDs.In the lower temperature regime,the deeper electron traps contribute to the capacitance transients with increasing r values,whereas at the higher temperatures>300 K,a slow variation of the trap levels(both electrons and holes)is observed when r is varied.These traps are found to be mainly contributed to dislocations,interfaces,and vacancies within the structure.
文摘The role of deposition rate in the structural, optical and electrical properties of SnOthin films deposited by electron beam evaporation method is investigated by varying the deposition powers viz. 50, 75, and 100 W.The structural characterization of the films is done by X-ray diffraction(XRD) technique. The surface morphology of the films is studied by scanning electron microscopy(SEM). Rutherford back scattering(RBS) measurements revealed the thickness of the films ranging from 200 nm to 400 and also a change in the concentration of oxygen vacancies which is found to be the maximum in the film deposited at the lowest deposition rate. Optical absorption spectrum is recorded using the UV–V is spectroscopy and the films are found to be transparent in nature. A shift in the absorption edge is observed and is attributed to a different level of allowed energy states in conduction band minimum. The Hall effect and electrical measurements show a variation in the carrier concentrations, mobility and resistivity of the films. In order to explore a better compromise in electrical and optical properties for transparent electrode applications, skin depths calculations are also done to find the optimized values of carrier concentration and mobility.
