Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy method.The grown MQW and InGaAsP quanternary alloy are characterized by using x-...Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy method.The grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction,room temperature photoluminescence measurements,confirming that optimum growth condition and high quality material have been obtained for device application.The grown laser structures are processed into ridge waveguide lasers.A threshold current as low as 16mA at 250C for 300μm long device has been obtained.Temperature-dependent light-current measurement shows a characteristic temperature of75K.展开更多
基金Supported by the Key Project for Fundamental Study of Chinese Academy of Sciences under Grant No.KT951-B1-706-3.
文摘Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy method.The grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction,room temperature photoluminescence measurements,confirming that optimum growth condition and high quality material have been obtained for device application.The grown laser structures are processed into ridge waveguide lasers.A threshold current as low as 16mA at 250C for 300μm long device has been obtained.Temperature-dependent light-current measurement shows a characteristic temperature of75K.
