Layered Surface Acoustic Wave (SAW) devices with an InO_x/SiN_u/36°YX LiTaO_3 structure were investigated for sensing low concentrations of hydrogen (H_2) and ozone (O_3) at different operating temperatures.The s...Layered Surface Acoustic Wave (SAW) devices with an InO_x/SiN_u/36°YX LiTaO_3 structure were investigated for sensing low concentrations of hydrogen (H_2) and ozone (O_3) at different operating temperatures.The sensor consists of a 1μm thick silicon nitride (SiN_y) intermediate layer deposited by electron beam evaporation on a 36°Y-cut X-propagating piezoelectric lithium tantalate (LiTaO_3) substrate and a 100 nm thin indium oxide (InO_x) sensing layer deposited by R.F.magnetron sputtering.The device fabrication is described and the performance of the sensor is analyzed in terms of response magnitude as a function of operating temperature.Large frequency shifts of 360 kHz for 600μg/g of H_2 and 92 kHz for 40 ng/g O_3 were recorded.In addition,the surface morphology of the deposited films were investigated by Atomic Force Microscopy (AFM) and the chemical composition by X-Ray Photoelectron Spectroscopy (XPS) to correlate gas-sensing behavior to structural characteristics of the thin film.展开更多
The mass sensitivity of a layered surface acoustic wave (SAW) device,ZnO/36°LiTaO_3,has been studied.Gold layers of different thicknesses were deposited to form the protein-sensitive layer,in order to compare th...The mass sensitivity of a layered surface acoustic wave (SAW) device,ZnO/36°LiTaO_3,has been studied.Gold layers of different thicknesses were deposited to form the protein-sensitive layer,in order to compare the responses to biological materials and to find the optimum thickness of the gold thin film.Sensitivity of the device was investigated by immobilization of lactate dehydrogenase (LDH) onto the device active area.展开更多
We have developed a novel thermoelectric gas sensors based on bismuth telluride thin films.These sensors were employed for sensing different concentrations of H_2 gas.Radio frequency (R.F.) magnetron sputtering was em...We have developed a novel thermoelectric gas sensors based on bismuth telluride thin films.These sensors were employed for sensing different concentrations of H_2 gas.Radio frequency (R.F.) magnetron sputtering was employed to deposit the bismuth telluride (Bi_2Te_3) thin films.The morphology of such thin films was investigated and responses of the thermoelectric devices to H_2 were studied.展开更多
文摘Layered Surface Acoustic Wave (SAW) devices with an InO_x/SiN_u/36°YX LiTaO_3 structure were investigated for sensing low concentrations of hydrogen (H_2) and ozone (O_3) at different operating temperatures.The sensor consists of a 1μm thick silicon nitride (SiN_y) intermediate layer deposited by electron beam evaporation on a 36°Y-cut X-propagating piezoelectric lithium tantalate (LiTaO_3) substrate and a 100 nm thin indium oxide (InO_x) sensing layer deposited by R.F.magnetron sputtering.The device fabrication is described and the performance of the sensor is analyzed in terms of response magnitude as a function of operating temperature.Large frequency shifts of 360 kHz for 600μg/g of H_2 and 92 kHz for 40 ng/g O_3 were recorded.In addition,the surface morphology of the deposited films were investigated by Atomic Force Microscopy (AFM) and the chemical composition by X-Ray Photoelectron Spectroscopy (XPS) to correlate gas-sensing behavior to structural characteristics of the thin film.
文摘The mass sensitivity of a layered surface acoustic wave (SAW) device,ZnO/36°LiTaO_3,has been studied.Gold layers of different thicknesses were deposited to form the protein-sensitive layer,in order to compare the responses to biological materials and to find the optimum thickness of the gold thin film.Sensitivity of the device was investigated by immobilization of lactate dehydrogenase (LDH) onto the device active area.
文摘We have developed a novel thermoelectric gas sensors based on bismuth telluride thin films.These sensors were employed for sensing different concentrations of H_2 gas.Radio frequency (R.F.) magnetron sputtering was employed to deposit the bismuth telluride (Bi_2Te_3) thin films.The morphology of such thin films was investigated and responses of the thermoelectric devices to H_2 were studied.
