Axisymmetric Stagnation-Point Flow with a General Slip Boundary Condition over a Lubricated Surface

We investigate the axisymmetric stagnation-point flow of a viscous fluid over a lubricated surface by imposing a generalized slip condition at the fluid-fluid interface.The power law non-Newtonian fluid is considered as a lubricant.The lubrication layer is thin and assumed to have a variable thickness.The transformed nonlinear ordinary differential equation governing the flow is linearized using quasilinearization.The method of superposi-tion is adopted to convert the boundary value problem into an initial value problem and the solution is obtained numerically by using the fourth-order Runge-Kutta method.The results are discussed to see the influence of pertinent parameters.The limiting cases of Navier and no-slip boundary conditions are obtained as the special cases and found to be in excellent agreement with the existing results in the literature.

Theoretical investigation of sulfur defects on structural, electronic,and elastic properties of ZnSe semiconductor

The structural, electronic, and elastic properties of ZnSe1-xSx for the zinc blende structures have been studied by using the density functional theory. The calculations were performed using the plane wave pseudopotential method, as implemented in Quantum ESPRESSO. The exchange-correlation potential is treated with the local density approximation pz-LDA for these properties. Moreover, LDA＋U approximation is employed to treat the ＂d＂ orbital electrons properly. A comparative study of the band gap calculated within both LDA and LDA＋U schemes is presented. The analysis of results show considerable improvement in the calculation of band gap. The inclusion of compositional disorder increases the values of all elastic constants. In this study, it is found that elastic constants C11, C12, and C44 are mainly influenced by the compositional disorder. The obtained results are in good agreement with literature.

Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage （l-V） measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy （SIMS） of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO,

Enhancement of phosphors-solubility in ZnO by thermal annealing

We have demonstrated the effect of annealing temperature on the diffusion density of phosphors in zinc oxide. The P-dopant P430 was sprayed on ZnO pellets and annealed at different temperatures from 500 to 1000 ℃ with a step of 100 ℃ for one hour using a programmable furnace. The concentration of P was controlled by varying the annealing temperature and the maximum solubility of P （3% At） was achieved at annealing 800 ℃ determined by energy dispersive X-ray diffraction （EDX） measurements. X-ray diffraction （XRD） confirmed the hexagonal structure of ZnO and showed that the growth direction was along the c-axis. We observed a maximum up shift in the （002） plane at an annealing temperature of 800 ℃, suggesting that P atoms replaced Zn atoms in the structure which results in the reduction of the lattice constant. Room temperature photoluminescence （PL） spectrum consists of a peak at 3.28 eV and related to band edge emission, but samples annealed at 800 and 900 ℃ have an additional donor acceptor pair peak at 3.2 eV. Hall effect measurements confirmed the p-type conductivity of the sample annealed at 800 ℃.

Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high- temperature thermal annealing. The ZnS thin films were grown on Si （001） substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction （XRD）, photoluminescence （PL）, four-point probe, scanning electron microscope （SEM） and energy dispersive X-ray diffraction （EDX）. The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two- step process： （1） high-energy O atoms replaced S atoms in lattice during annealing process, and （2） S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log （resistivity） was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.