The electrode effect of resistive switching memory devices on resistive switching behaviors is studied.Compared to TiN-or Ti-electrode devices,significantly reduced switching parameters such as resistance-ratio of hig...The electrode effect of resistive switching memory devices on resistive switching behaviors is studied.Compared to TiN-or Ti-electrode devices,significantly reduced switching parameters such as resistance-ratio of high-and low-resistance states and set-voltage are observed experimentally in the Al-electrode devices when a positive voltage bias is applied to the Al-electrode during the forming process.An electric-field induced metal-ion-migration effect is proposed to elucidate the observed electrode dependence of the resistive switching behaviors in the resistive switching memory devices.The further measured data identify the validity of the proposed mechanism.展开更多
Large low-field magnetoresistance(LFMR)of∆p/pH=40%is obtained at 163 K within±3000 Oe in a polycrystalline La_(0.7)Ca_(0.3)MnO_(3)(LCMO)films prepared by pulsed laser deposition.The ratio∆p/pH increases almost li...Large low-field magnetoresistance(LFMR)of∆p/pH=40%is obtained at 163 K within±3000 Oe in a polycrystalline La_(0.7)Ca_(0.3)MnO_(3)(LCMO)films prepared by pulsed laser deposition.The ratio∆p/pH increases almost linearly with H in the measuring magnetic field range and the peak of LFMR ratios is observed near the resistivity peak temperature,which is different from the observation of spin-polarized intergrain tunnels.This experiment suggests that grain boundaries have large influences on the LFMR.The results indicate that a suitable film process can be used to increase the LFMR of LCMO films.展开更多
基金Supported by the National Basic Research Program of China(2011CBA00600)the National Natural Science Foundation of China(61334007).
文摘The electrode effect of resistive switching memory devices on resistive switching behaviors is studied.Compared to TiN-or Ti-electrode devices,significantly reduced switching parameters such as resistance-ratio of high-and low-resistance states and set-voltage are observed experimentally in the Al-electrode devices when a positive voltage bias is applied to the Al-electrode during the forming process.An electric-field induced metal-ion-migration effect is proposed to elucidate the observed electrode dependence of the resistive switching behaviors in the resistive switching memory devices.The further measured data identify the validity of the proposed mechanism.
基金Supported by the National Natural Science Foundation of China under Grant No.19674001.
文摘Large low-field magnetoresistance(LFMR)of∆p/pH=40%is obtained at 163 K within±3000 Oe in a polycrystalline La_(0.7)Ca_(0.3)MnO_(3)(LCMO)films prepared by pulsed laser deposition.The ratio∆p/pH increases almost linearly with H in the measuring magnetic field range and the peak of LFMR ratios is observed near the resistivity peak temperature,which is different from the observation of spin-polarized intergrain tunnels.This experiment suggests that grain boundaries have large influences on the LFMR.The results indicate that a suitable film process can be used to increase the LFMR of LCMO films.
