A bound-exciton and a donor-acceptor(D-A)pair emission in photoluminescence are identified for Te-doped A1_(x)Ga_(1-x)As.The D-A pair emission near band edge is assigned as Te-related donor to carbon acceptor transiti...A bound-exciton and a donor-acceptor(D-A)pair emission in photoluminescence are identified for Te-doped A1_(x)Ga_(1-x)As.The D-A pair emission near band edge is assigned as Te-related donor to carbon acceptor transition and the donor binding energy is determined as a function of composition x up to 0.75.Except the deep DX level,a new shallower deep state is found in deep level transient spectra under light illumination and is associated with Te-related donor state in PL.展开更多
Deep donor levels in Te-doped GaAs_(1-x)P_(x) for a large range of compositions have been studied by deep level transient spectroscopy(DLTS).Three kinds of deep levels A,B,and C were observed.Only level A appears in a...Deep donor levels in Te-doped GaAs_(1-x)P_(x) for a large range of compositions have been studied by deep level transient spectroscopy(DLTS).Three kinds of deep levels A,B,and C were observed.Only level A appears in all the samples;it is considered that level A is originated from DX centers.No any regularity of presentation for levels B and C was able to find.Their properties are probably more complicated.展开更多
The effect of Ag nanoislands on the Raman of graphene was investigated in this work.Compared with that on the bare silicon wafer,Raman enhancement was observed in the graphene film that covered on Ag/Si surface with n...The effect of Ag nanoislands on the Raman of graphene was investigated in this work.Compared with that on the bare silicon wafer,Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands,which would be induced by the localized plasmon resonance in Ag nanostructures.The interaction between the graphene sheet and Ag/Si substrate was further studied.The peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.展开更多
基金Project supported by the National Natural Science Foundation of China and Laboratory for Infrared Physics in Shanghai Institute of Technical Physics,Academia Sinica.
文摘A bound-exciton and a donor-acceptor(D-A)pair emission in photoluminescence are identified for Te-doped A1_(x)Ga_(1-x)As.The D-A pair emission near band edge is assigned as Te-related donor to carbon acceptor transition and the donor binding energy is determined as a function of composition x up to 0.75.Except the deep DX level,a new shallower deep state is found in deep level transient spectra under light illumination and is associated with Te-related donor state in PL.
基金Project supported by the National Science Foundation of China.
文摘Deep donor levels in Te-doped GaAs_(1-x)P_(x) for a large range of compositions have been studied by deep level transient spectroscopy(DLTS).Three kinds of deep levels A,B,and C were observed.Only level A appears in all the samples;it is considered that level A is originated from DX centers.No any regularity of presentation for levels B and C was able to find.Their properties are probably more complicated.
基金supported by the National Natural Science Foundation of China(Grant Nos.91123009,11104229 and 61227009)Xiamen University Start-up Funds
文摘The effect of Ag nanoislands on the Raman of graphene was investigated in this work.Compared with that on the bare silicon wafer,Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands,which would be induced by the localized plasmon resonance in Ag nanostructures.The interaction between the graphene sheet and Ag/Si substrate was further studied.The peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.
