40 years ago, there was a revolution in power converter efficiency, density, size and cost, with the introduction of silicon MOSFETs,PWM integrated circuits(ICs),new magnetic materials and new switch-mode power topolo...40 years ago, there was a revolution in power converter efficiency, density, size and cost, with the introduction of silicon MOSFETs,PWM integrated circuits(ICs),new magnetic materials and new switch-mode power topologies.Now,another revolution is enabled with wide band-gap gallium nitride(GaN) power ICs,new control ICs,new magnetics and the commercialization of high-frequency topologies.Monolithic integration combines GaN FET,GaN logic,GaN driver and now GaN level-shifters,to enable MHz+switching without parasitic concerns.This paper introduces the AllGaN^(TM) 650 V lateral GaN technology, essential GaN power ICs features and performance across a wide range of applications, at up to 1 MHz,from 25 W to 3.2 kW.展开更多
文摘40 years ago, there was a revolution in power converter efficiency, density, size and cost, with the introduction of silicon MOSFETs,PWM integrated circuits(ICs),new magnetic materials and new switch-mode power topologies.Now,another revolution is enabled with wide band-gap gallium nitride(GaN) power ICs,new control ICs,new magnetics and the commercialization of high-frequency topologies.Monolithic integration combines GaN FET,GaN logic,GaN driver and now GaN level-shifters,to enable MHz+switching without parasitic concerns.This paper introduces the AllGaN^(TM) 650 V lateral GaN technology, essential GaN power ICs features and performance across a wide range of applications, at up to 1 MHz,from 25 W to 3.2 kW.
