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Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission
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作者 kongling-min CAIJia-fa +2 位作者 WUZheng-yun GONGZheng NIUZhi-chuan 《Semiconductor Photonics and Technology》 CAS 2005年第2期78-80,115,共4页
The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1.48μm... The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1.48μm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers, which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature. 展开更多
关键词 InAs/GaAs quantum dots Time-resolved spectra Carrier transportation
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