Microscopic growth mechanism and edge states of monolayer 1T'-MoTe_(2)

Transition metal ditellurides(TMTDs)have versatile physical properties,including non-trivial topology,Weyl semimetal states and unique spin texture.Controlled growth of high-quality and large-scale monolayer TMTDs with preferred crystal phases is crucial for their applications.Here,we demonstrate the epitaxial growth of 1T'-MoTe_(2) on Au(111)and graphitized silicon carbide(Gr/SiC)by molecular beam epitaxy(MBE).We investigate the morphology of the grown1T'-MoTe_(2) at the atomic level by scanning tunnelling microscopy(STM)and reveal the corresponding microscopic growth mechanism.It is found that the unique ordered Te structures preferentially deposited on Au(111)regulate the growth of monolayer single crystal 1T'-MoTe_(2),while the Mo clusters were preferentially deposited on the Gr/SiC substrate,which impedes the ordered growth of monolayer MoTe_(2).We confirm that the size of single crystal 1T'-MoTe_(2) grown on Au(111)is nearly two orders of magnitude larger than that on Gr/SiC.By scanning tunnelling spectroscopy(STS),we observe that the STS spectrum of the monolayer 1T'-MoTe_(2) nano-island at the edge is different from that at the interior,which exhibits enhanced conductivity.

Polarized photoluminescence spectroscopy in WS_(2),WSe_(2) atomic layers and heterostructures by cylindrical vector beams

Due to the large exciton binding energy,two-dimensional(2D)transition metal dichalcogenides(TMDCs)provide an ideal platform for studying excitonic states and related photonics and optoelectronics.Polarization states lead to distinct light-matter interactions which are of great importance for device applications.In this work,we study polarized photoluminescence spectra from intralayer exciton and indirect exciton in WS_(2) and WSe_(2) atomic layers,and interlayer exciton in WS_(2)/WSe_(2) heterostructures by radially and azimuthally polarized cylindrical vector laser beams.We demonstrated the same in-plane and out-of-plane polarization behavior from the intralayer and indirect exciton.Moreover,with these two laser modes,we obtained interlayer exciton in WS_(2)/WSe_(2) heterostructures with stronger out-of-plane polarization,due to the formation of vertical electric dipole moment.

Picosecond electrical response in graphene/MoTe_(2) heterojunction with high responsivity in the near infrared region

Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity.Devices based on two-dimensional(2D)transition metal dichalcogenides can exhibit picosecond photoresponse speed.However,2D materials naturally have low absorption,and when increasing thickness to gain higher responsivity,the response time usually slows to nanoseconds,limiting their photodetection performance.Here,by taking time-resolved photocurrent measurements,we demonstrated that graphene/MoTe_(2) van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction,which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd_(3)As_(2) and implies a photodetection bandwidth as wide as 100 GHz.Furthermore,we found that an additional charge carrier transport channel provided by graphene can ef-fectively decrease the photocurrent recombination loss to the entire device,preserving a high responsivity in the near-infrared region.Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.