Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical...Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.展开更多
A magnetic tunnel junction(MTJ)is the core component in memory technologies,such as the magnetic random-access memory,magnetic sensors and programmable logic devices.In particular,MTJs based on twodimensional van der ...A magnetic tunnel junction(MTJ)is the core component in memory technologies,such as the magnetic random-access memory,magnetic sensors and programmable logic devices.In particular,MTJs based on twodimensional van der Waals(vd W)heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices.However,their operation at room temperature remains a challenge.Here,we report a large tunnel magnetoresistance(TMR)of up to 85%at room temperature(T=300 K)in vdW MTJs based on a thin(<10 nm)semiconductor spacer WSe_(2)layer embedded between two Fe_(3)GaTe_(2e)lectrodes with intrinsic above-room-temperature ferromagnetism.The TMR in the MTJ increases with decreasing temperature up to 164%at T=10 K.The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.展开更多
Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)region.However,the narrow bandgap can cause noise owing to the h...Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)region.However,the narrow bandgap can cause noise owing to the high dark current in photodetectors.This article reports quasi-1D ZrGeTe_(4)nanoribbonbased photodetectors with low dark current and broadband polarization detection.The photodetector was fabricated by evaporating 50-nm-thick Au electrodes on a ZrGeTe_(4)nanoribbon.Benefiting from the photovoltaic characteristics in the ZrGeTe_(4)nanoribbon and Au electrodes,these photodetectors can operate without bias voltage,with decreased dark current,and improved device performance.Furthermore,the quasi-1D ZrGeTe_(4)nanoribbon-based photodetectors demonstrate a polarization sensitivity in a broadband from visible(VIS)to the NIR region,such as a high photoresponsivity of 625.65 mA W1,large external quantum efficiency of 145.9%at 532 nm,and photocurrent anisotropy ratio of 2.04 at 1064 nm.They exhibit a novel perpendicular optical reversal of 90in polarization-sensitive photodetection,angle-resolved absorption spectra,and azimuth-dependent reflectance difference microscopy(ADRDM)from VIS to the NIR region,as opposed to other nanoribbon-based polarization-sensitive photodetectors.This work paves the way for utilizing photovoltaic photodetectors based on low-dimensional materials for broad-spectrum polarized photodetection.展开更多
Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulat...Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently desired.In this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure devices.We found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida model.Our finding opens a new route for understanding and using the AFM interfacial spins in spintronics.展开更多
Ⅲ-ⅤSemiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties[1,2].Previous studies have bee...Ⅲ-ⅤSemiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties[1,2].Previous studies have been primarily focused on the growth and optical properties of the GaAs-based bismuthides[3],while the properties of other dilute bismides are less well understood.Berding et al.[4]theoretically predicted that InPBi is expected to be展开更多
基金supported by the National Key R&D Program of China (Grant No. 2017YFA0303400 and No.2017YFB 0405700)supported by the NSFC Grant Nos. 61774144 and 11474272sponsored by Chinese Academy of Sciences, grant No. QYZDY-SSW-JSC020, XDPB12, and XDB28000000
文摘Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.
基金supported by the National Key Research and Development Program of China(Grant Nos.2022YFA1405100 and 2022YFE0134600)the Beijing Natural Science Foundation Key Program(Grant No.Z190007)+2 种基金the National Natural Science Foundation of China(Grant Nos.61774144,62005265,and 52272152)the Key Research Program of Frontier Sciences(Grant No.QYZDY-SSW-JSC020)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB44000000 and XDB28000000)。
文摘A magnetic tunnel junction(MTJ)is the core component in memory technologies,such as the magnetic random-access memory,magnetic sensors and programmable logic devices.In particular,MTJs based on twodimensional van der Waals(vd W)heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices.However,their operation at room temperature remains a challenge.Here,we report a large tunnel magnetoresistance(TMR)of up to 85%at room temperature(T=300 K)in vdW MTJs based on a thin(<10 nm)semiconductor spacer WSe_(2)layer embedded between two Fe_(3)GaTe_(2e)lectrodes with intrinsic above-room-temperature ferromagnetism.The TMR in the MTJ increases with decreasing temperature up to 164%at T=10 K.The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.
基金supported by the National Key R&D Program of China (2017YFA0303400 and 2017YFB0405700)the National Natural Science foundation of China (61774144)+2 种基金Beijing Natural Science Foundation Key Program (Z190007)the Project from Chinese Academy of Sciences (QYZDY-SSW-JSC020, XDPB12, and XDB28000000)K C Wong Education Foundation。
基金Pearl River Talent Recruitment Program,Grant/Award Numbers:2019ZT08X639,2017YFA0207500CAS-JSPS Cooperative Research Project,Grant/Award Number:GJHZ2021131+2 种基金Strategic Priority Research Program of the Chinese Academy of Sciences,Grant/Award Number:XDB43000000National Key Research and Development Program of ChinaNational Natural Science Foundation of China,Grant/Award Numbers:12004375,62004193。
文摘Low-dimensional semiconductors with in-plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near-infrared(NIR)region.However,the narrow bandgap can cause noise owing to the high dark current in photodetectors.This article reports quasi-1D ZrGeTe_(4)nanoribbonbased photodetectors with low dark current and broadband polarization detection.The photodetector was fabricated by evaporating 50-nm-thick Au electrodes on a ZrGeTe_(4)nanoribbon.Benefiting from the photovoltaic characteristics in the ZrGeTe_(4)nanoribbon and Au electrodes,these photodetectors can operate without bias voltage,with decreased dark current,and improved device performance.Furthermore,the quasi-1D ZrGeTe_(4)nanoribbon-based photodetectors demonstrate a polarization sensitivity in a broadband from visible(VIS)to the NIR region,such as a high photoresponsivity of 625.65 mA W1,large external quantum efficiency of 145.9%at 532 nm,and photocurrent anisotropy ratio of 2.04 at 1064 nm.They exhibit a novel perpendicular optical reversal of 90in polarization-sensitive photodetection,angle-resolved absorption spectra,and azimuth-dependent reflectance difference microscopy(ADRDM)from VIS to the NIR region,as opposed to other nanoribbon-based polarization-sensitive photodetectors.This work paves the way for utilizing photovoltaic photodetectors based on low-dimensional materials for broad-spectrum polarized photodetection.
基金supported by the National Key R&D Program of China(Grant No.2017YFB0405700)the National Natural Science Foundation of China(Grant Nos.11474272,and 61774144)+1 种基金the Beijing Natural Science Foundation Key Program(Grant No.Z190007)the Chinese Academy of Sciences(Grant Nos.QYZDY-SSW-JSC020,XDB28000000,and XDPB44000000)。
文摘Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently desired.In this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure devices.We found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida model.Our finding opens a new route for understanding and using the AFM interfacial spins in spintronics.
基金supported by the National Basic Research Program of China(Grant No.2014CB643900)the National Natural Science Foundation of China(Grant Nos.61225021,11474272,11204296,and 11474247)
文摘Ⅲ-ⅤSemiconductors containing a small amount of Bi,known as dilute bismides,have attracted great interest in recent years,due to the large band-gap reduction and other unique properties[1,2].Previous studies have been primarily focused on the growth and optical properties of the GaAs-based bismuthides[3],while the properties of other dilute bismides are less well understood.Berding et al.[4]theoretically predicted that InPBi is expected to be
