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Insight into the structure-capacity relationship in biomass derived carbon for high-performance sodium-ion batteries
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作者 Jianguo Sun Yao Sun +6 位作者 Jin An Sam Oh Qilin Gu Weidong Zheng Minhao Goh kaiyang zeng Yuan Cheng Li Lu 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2021年第11期497-504,I0011,共9页
Carbonaceous materials are the most promising candidates as the anode for sodium-ion batteries (SIBs), however, they still suffer from low electric conductivity and sluggish sodium ion (Na+) reaction kinetics. Appropr... Carbonaceous materials are the most promising candidates as the anode for sodium-ion batteries (SIBs), however, they still suffer from low electric conductivity and sluggish sodium ion (Na+) reaction kinetics. Appropriate composition modulation using heteroatoms doping and structure optimization is highly desired. A basic empirical understanding of the structure-capacity relationship is also urgent in tackling the above problems. Herein, multi-functional nitrogen (N) doped carbon micro-rods with enlarged interlayer spacing are synthesized and investigated as the anode in SIBs, showing an ultra-stable capacity of 161.5 mAh g^(−1) at 2 A g^(−1) for over 5000 cycles. Experimental investigations and first-principle calculations indicate that the enlarged interlayer spacing can facilitate Na+ intercalation and N doping can guarantee the high electric conductivity and favorable electrochemical active sites. Additionally, pyridinic N is theoretically proved to be more effective to enhance Na+ adsorption than pyrrolic N due to the lower adsorption energy and stronger binding energy with Na+. Full SIBs show a high capacity and cyclability, making the biomass-derived carbon micro-rods to be a promising anode for practical SIBs applications. 展开更多
关键词 BIOMASS Nitrogen doping Hard carbon Sodium-ion batteries
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Alleviating mechanical degradation of hexacyanoferrate via strain locking during Na^(+) insertion/extraction for full sodium ion battery 被引量:4
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作者 Jianguo Sun Hualin Ye +6 位作者 Jin An Sam Oh Yao Sun Anna Plewa Yumei Wang Tian Wu kaiyang zeng Li Lu 《Nano Research》 SCIE EI CSCD 2022年第3期2123-2129,共7页
Generation of large strains upon Na^(+) intercalation is one of the prime concerns of the mechanical degradation of Prussian blue(PB)and its analogs.Structural construction from the atomic level is imperative to maint... Generation of large strains upon Na^(+) intercalation is one of the prime concerns of the mechanical degradation of Prussian blue(PB)and its analogs.Structural construction from the atomic level is imperative to maintain structural stability and ameliorate the long-term stability of PB.Herein,an inter nickel hexacyanoferrate(NNiFCN)is successfully introduced at the out layer of iron hexacyanoferrate(NFFCN)through ion exchange to improve structural stability through compressive stress locking by forming NNiFCN shell.Furthermore,the kinetics of sodium ion diffusion is enhanced through the built-in electric pathway.The electrochemical performance is therefore significantly improved with a remarkable long-term cycling stability over 3,000 cycles at 500 mA·g^(–1) in the full sodium-ion batteries(SIBs)with a maximum energy density of 91.94 Wh·g^(–1),indicating that the core-shell structured NNiFCN/NFFCN could be the low-cost and high-performance cathode for full SIBs in large-scale EES applications. 展开更多
关键词 mechanical degradation core-shell structure Prussian blue full sodium-ion battery built-in electric field
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Local phenomena at grain boundaries:An alternative approach to grasp the role of oxygen vacancies in metallization of VO_(2) 被引量:2
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作者 Wanheng Lu Lai-Mun Wong +1 位作者 Shijie Wang kaiyang zeng 《Journal of Materiomics》 SCIE EI 2018年第4期360-367,共8页
Vanadium dioxide(VO_(2))undergoes an insulator to metal transition(MIT)and an accompanied phase transition from a monoclinic(M)structure to rutile(R)structure near room temperature,forming the basis for many VO_(2)-ba... Vanadium dioxide(VO_(2))undergoes an insulator to metal transition(MIT)and an accompanied phase transition from a monoclinic(M)structure to rutile(R)structure near room temperature,forming the basis for many VO_(2)-based functional devices.The MIT transition of VO_(2)and the functionality of VO_(2)-based devices can be controlled by a variety of chemical and physical stimuli.With these external stimuli,defects,such as oxygen vacancies,are often inevitably introduced.However,due to the VeO systeminduced challenge to synthesize stable VO_(2)with different oxygen vacancy concentrations,the impact of oxygen vacancies on the resistance and transition of the VO_(2)is not fully understood.Oxygen vacancy,as one of the typical defects in VO_(2),is expected to concentrate at grain boundaries,and hence a concentration gradient of oxygen vacancies may exist between the grains interior and the boundaries,and this suggests a possibility to study the effects of oxygen vacancies on the transition of VO_(2)by probing local phenomena at the grain boundaries.For investigating local phenomena at the grain boundaries,Scanning Probe Microscopy(SPM)techniques are effective,which allows probing the structure and various properties at the nanoscale.In this work,a series of SPM techniques,including Atomic Force Microscopy(AFM),conductive-AFM(c-AFM),Electrochemical Strain Microscopy(ESM),and Kelvin Probe Force Microscopy(KPFM),are employed to measure variations of the surface structure,the resistance,the oxygen vacancy concentration,and the work function between the grain interior and the grain boundary.It has been demonstrated that,for most cases,both the resistance and the work function are lower at the grain boundaries as a result of the accumulation of oxygen vacancies at those positions.In addition,the resistance change induced by the electric field has been observed in the deposited VO_(2)thin films,which may be associated with the generation/annihilation of the oxygen vacancies,rather than charge injection.This work has demonstrated the effects of oxygen vacancies in the transition of VO_(2)by probing the local phenomena at grain boundaries,also provided a new insight into the resistance change of VO_(2)under an electric field. 展开更多
关键词 Fermi level VO_(2)thin film c-AFM KPFM ESM
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Effects of oxygen and moisture on the I-V characteristics of TiO_(2) thin films 被引量:2
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作者 Wanheng Lu Lai-Mun Wong +1 位作者 Shijie Wang kaiyang zeng 《Journal of Materiomics》 SCIE EI 2018年第3期228-237,共10页
Current-voltage(I-V)characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory(ReRAM).It has been observed that the atmospheri... Current-voltage(I-V)characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory(ReRAM).It has been observed that the atmospheric environment can affect the resistive switching performance,but the origin of this effect is still under debate.Conductive Atomic Force Microscopy(c-AFM)is widely used to study the resistive switching performance because of its capability to realize the resistive switching at the nanoscale that is becoming attractive as the miniaturization of memory devices.This study therefore aims to understand the effects of oxygen and moisture on the I-V characteristics of the TiO_(2)thin film by performing c-AFM measurements in ambient air,synthetic air,and argon gas.It is found that the oxygen in the environment can reduce the set and the reset voltages for the resistive switching,and it can also reduce the resistance at the low resistance state(LRS).Where the moisture in the environment can increase the set and reset voltages,and increase the resistance at LRS.These effects of oxygen and moisture in the environment can be attributed to the modification of the effective electric field during the resistive switching processes,which have been further confirmed by Kelvin Probe Force Microscopy(KPFM)measurements.In addition,it is found that the local ionic dynamics of TiO_(2)during the resistive switching are strongly dependent of the environments by performing the FORC-IV(First Order Reversal Curve-Current-Voltage)measurements in the three gas environments.Results in this work can provide a new perspective on the effect of environments on the resistive switching of materials,that is,the modulation of the effective electric field due to the adsorption of oxygen and moisture under the c-AFM tip. 展开更多
关键词 Resistive switching Environmental control c-AFM KPFM FORC-IV
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低电场下耐疲劳La掺杂PbZrO3薄膜的储能特性及温度稳定性研究
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作者 乔骁骏 耿文平 +9 位作者 陈茜 张乐 郑冬宛 张辽原 何剑 侯晓娟 杨云 崔敏 曾开阳 丑修建 《Science China Materials》 SCIE EI CSCD 2020年第11期2325-2334,共10页
为了满足恶劣环境下低功耗脉冲功率器件的需求,具有超高储能密度和温度稳定性的静电储能电容器受到广泛关注.本研究在较低的电场激励作用和极宽的温度范围内获得了高储能性能的反铁电薄膜.采用溶胶^-凝胶法制备了La掺杂的Pb Zr O3薄膜,... 为了满足恶劣环境下低功耗脉冲功率器件的需求,具有超高储能密度和温度稳定性的静电储能电容器受到广泛关注.本研究在较低的电场激励作用和极宽的温度范围内获得了高储能性能的反铁电薄膜.采用溶胶^-凝胶法制备了La掺杂的Pb Zr O3薄膜,在~800 k V cm^-1电场下,室温下可释放储能密度34.87 J cm^-3,储能效率为59.23%.此外,该储能特性具有优良的温度稳定性(210°C下储能密度为27.98 J cm^-3)、抗疲劳特性(3×10^9次循环后无明显疲劳)以及频率稳定性(储能密度:39.78–29.32 J cm^-3;储能效率:61.03%–44.95%)(测试频率10–5000 Hz,电场为~900 k V cm^-1).反铁电薄膜储能性能提升主要是由于La Ni O3缓冲层以及掺杂产生铅空位而引起的高极化值(Pmax约为103.7μC cm^-2)和较低的剩余极化(Pr^7μC cm^-2),为脉冲功率器件在低功耗系统中的应用奠定了研究基础. 展开更多
关键词 储能电容器 温度稳定性 频率稳定性 储能密度 储能效率 脉冲功率 储能特性 铁电薄膜
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Piezo-/ferroelectric phenomena in biomaterials: A brief review of recent progress and perspectives
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作者 Yao Sun kaiyang zeng Tao Li 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2020年第7期29-46,共18页
There have been overwhelming observations of piezo-/ferroelectric phenomena in many biological tissues and macromolecules,boosting the development of bio-based smart devices and the applications using electromechanica... There have been overwhelming observations of piezo-/ferroelectric phenomena in many biological tissues and macromolecules,boosting the development of bio-based smart devices and the applications using electromechanical coupling phenomena in biological systems.The electromechanical coupling is believed to be responsible for various biophysical behaviors and remarkable biomaterial properties.Despite the abundant phenomenal observations,the fundamental understanding of the piezo-/ferroelectric effect in biomaterials/systems and the rational design of biobased macroscopic materials with desired piezoelectric responses are still scarce.In this review,we firstly present remarkable historical events on the development of piezo-/ferroelectricity in biomaterials,followed by a brief overview of the fundamental physics of piezo-/ferroelectricity.The developments of biopiezo-/bioferroelectricity in protein-based biomaterials and their implications are highlighted subsequently.In experimental studies,to identify the intrinsic piezo-/ferroelectric properties from other effects or artifacts is usually elusive.This issue is also addressed and discussed in detail,especially using piezoelectric force microscopy(PFM)and spectroscopy techniques to investigate the local piezo-/ferroelectric phenomena in nanostructured materials are highlighted emphatically. 展开更多
关键词 BIOMATERIALS electromechanical coupling PIEZOELECTRIC FERROELECTRIC piezoresponse force microscopy
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Variation of contact resonance frequency during domain switching in PFM measurements for ferroelectric materials
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作者 Yue Liu Yao Sun +5 位作者 Wanheng Lu Hongli Wang Zhongting Wang Bingxue Yu Tao Li kaiyang zeng 《Journal of Materiomics》 SCIE EI 2020年第1期109-118,共10页
Piezoresponse Force Spectroscopy(PFS)is a powerful technique widely used for measuring the nanoscale electromechanical coupling of the ferro-/piezo-electric materials.However,it is found that certain nonferroelectric ... Piezoresponse Force Spectroscopy(PFS)is a powerful technique widely used for measuring the nanoscale electromechanical coupling of the ferro-/piezo-electric materials.However,it is found that certain nonferroelectric materials can also generate the“hysteresis-loop-like”responses from the PFS measurements due to many other factors such as electrostatic effects.This work therefore studies the signal of the contact resonance frequency during the PFS measurements.By comparing the results from ferroelectric and non-ferroelectric materials,it is found there are distinct differences between these two types of materials in the variation of the contact resonance frequency during the PFS measurements.A momentary and sharp increase of the contact resonance frequency occurs when the domain is switched by applying the DC bias,which can be regarded as a unique characteristic for the ferroelectric materials.After analyzing the reliability and mechanism of this method,it is proposed that the contact resonance frequency variation at the coercive bias is capable to differentiate the electromechanical responses of the ferroelectric and non-ferroelectric materials during the PFS measurements. 展开更多
关键词 FERROELECTRICITY Piezoresponse force spectroscopy Contact resonance frequency Dual AC resonance tracking Domain switching Damping harmonic oscillator model
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Correlation of resistance switching and polarization rotation in copper doped zinc oxide(ZnO:Cu)thin films studied by Scanning Probe Microscopy
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作者 Juanxiu Xiao Tun Seng Herng +3 位作者 Yang Guo Jun Ding Ning Wang kaiyang zeng 《Journal of Materiomics》 SCIE EI 2019年第4期574-582,共9页
This paper presents multiple-modes Scanning Probe Microscopy(SPM)studies on characterize the correlation of resistance switching(RS)and polarization rotation(PR)in copper doped ZnO(ZnO:Cu)thin films.Firstly,the bipola... This paper presents multiple-modes Scanning Probe Microscopy(SPM)studies on characterize the correlation of resistance switching(RS)and polarization rotation(PR)in copper doped ZnO(ZnO:Cu)thin films.Firstly,the bipolar RS behavior is confirmed by conductive Atomic Force Microscopy(c-AFM).The PR with almost 180phase angle is confirmed by using the Piezoresponse Force Microscopy(PFM)on the same location.In addition,it elucidates that obvious PR behavior can be observed in the sample with increasing Cu concentration by combining Kelvin Probe Force Microscopy(KPFM).Furthermore,it is found that the region with downward polarization has low resistance state(LRS),whereas the region with upward polarization has high resistance state(HRS).Moreover,the Piezoresponse Force Spectroscopy(PFS)and Switching Spectroscopy PFM(SS-PFM)measurements further confirm that the existence of the built-in voltage,V_(built-in) is largest in the ZnO:Cu(8 at.%)film deposited at the oxygen partial pressure of 2×10^(-4) Torr.The schematic diagrams of energy band diagram with varied built-in field,Ebuilt-in,polarization directions and redistributed charges are presented to explain the correlation between RS and PR behavior. 展开更多
关键词 Resistive switching Polarization rotation Built-in voltage ZnO:Cu thin film Next generation memory
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