By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0....By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.展开更多
Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture(SEGR) and single event burnout(SEB), which will degrade the r...Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture(SEGR) and single event burnout(SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator(DSPSOI) layers. Results show that the safety operation area(SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm^2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs.展开更多
文摘By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.
基金Project supported by the National Natural Science Foundation of China(No.61464002)the Grand Science and Technology Special Project in Guizhou Province of China(No.[2015]6006)the Ministry of Education Open Foundation for Semiconductor Power Device Reliability(No.010201)
文摘Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture(SEGR) and single event burnout(SEB), which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOSFETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator(DSPSOI) layers. Results show that the safety operation area(SOA) of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV·cm^2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs.
