Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the...Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy(PMA), voltage-controlled magnetic anisotropy(VCMA), and interface magnetoelectric(ME) effect. High interfacial PMA of 1.35 mJ/m^2, VCMA coefficient of-138 fJ/(V m), and interface ME coefficient, which is 2-3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for highdensity voltage-controlled spintronic devices.展开更多
基金supported by the NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS)a Phase II NSF Small Business Innovation Research award+1 种基金supported by the Energy Frontier Research Center for Spins and Heat in Nanoscale Electronic Systems (SHINES)support of China Scholarship Council (CSC)
文摘Voltage control of magnetism promises great energy efficiency in writing magnetic memory. Here, using Cr/Mo/CoFeB/MgO multilayers stable under high annealing temperatures up to 590°C, we significantly enhance the interfacial crystallinity, thereby the interface-originated perpendicular magnetic anisotropy(PMA), voltage-controlled magnetic anisotropy(VCMA), and interface magnetoelectric(ME) effect. High interfacial PMA of 1.35 mJ/m^2, VCMA coefficient of-138 fJ/(V m), and interface ME coefficient, which is 2-3 orders of magnitude larger than ab initio calculation results are simultaneously achieved after annealing at 500°C. These promising results enabled by the industry-applicable sputtering process will pave the way for highdensity voltage-controlled spintronic devices.
