A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A ...A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase matching.Because the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing equipment.To guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the amplifier.In this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a JTWPA.The results provide insightful and scientific guidance for device design and fabrication processes.展开更多
The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device applications.We investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p...The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device applications.We investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p-InP based on the solid phase regrowth principle.The lowest specific contact resistivity of Au(100 nm)/Pt(115 nm)/Ni(50 nm)can reach 2.64×10^(-6)Ω·cm^(2) after annealing at 380℃ for 1 min,while the contact characteristics of Au/Ni deteriorated after annealing from 340℃ to 480℃ for 1 min.The results of scanning electron microscopy,atomic force microscopy and x-ray photoelectron spectroscopy show that the Pt layer is an important factor in improving the contact characteristics.The Pt layer prevents the diffusion of In and Au,inhibits the formation of Au3In metal compounds,and prevents the deterioration of the ohmic contact.The metal structures and optimized annealing process is expected to be helpful for obtaining high-performance InP-related devices.展开更多
基金support from the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No.2019319)support from the Start-up Foundation of Suzhou Institute of Nano-Tech and Nano-Bionics,CAS,Suzhou (Grant No.Y9AAD110)。
文摘A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase matching.Because the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing equipment.To guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the amplifier.In this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a JTWPA.The results provide insightful and scientific guidance for device design and fabrication processes.
基金Supported by the National Natural Science Foundation of China(Grant Nos.62004218,61704008,61804176,and 61991441)Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.2021005)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB01000000)Jiangsu Science and Technology Plan(Grant No.BK20180255)supported by the Center for Clean Energy,Institute of Physics,Chinese Academy of Sciences。
文摘The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device applications.We investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p-InP based on the solid phase regrowth principle.The lowest specific contact resistivity of Au(100 nm)/Pt(115 nm)/Ni(50 nm)can reach 2.64×10^(-6)Ω·cm^(2) after annealing at 380℃ for 1 min,while the contact characteristics of Au/Ni deteriorated after annealing from 340℃ to 480℃ for 1 min.The results of scanning electron microscopy,atomic force microscopy and x-ray photoelectron spectroscopy show that the Pt layer is an important factor in improving the contact characteristics.The Pt layer prevents the diffusion of In and Au,inhibits the formation of Au3In metal compounds,and prevents the deterioration of the ohmic contact.The metal structures and optimized annealing process is expected to be helpful for obtaining high-performance InP-related devices.
