Equipment has been designed and created for experimental simulation of space environment conditions of Geostationary orbit of the Earth. The following conditions are supported in the vacuum chamber having volume of 1....Equipment has been designed and created for experimental simulation of space environment conditions of Geostationary orbit of the Earth. The following conditions are supported in the vacuum chamber having volume of 1.2 cubic meters: Vacuum 10-5 Torr. (1.3 × 10-3 Pa), electron beam with energy up to 8 MeV, temperatures from -150°C to +150°C and solar ultraviolet radiation. The peculiarity of this equipment is the possibility of analyzing complex simultaneous influence of mentioned above 4 factors on the sample and in-situ direct measurement of sample parameters under irradiation which provides almost real conditions. Silicon single crystals used in space environment were tested in the vacuum chamber and new results were received having scientific and applied interest. It was shown, particularly, that the electro-conductivity of silicon samples has higher value at in-situ condition than ex-situ after irradiation.展开更多
The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied un...The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.展开更多
文摘Equipment has been designed and created for experimental simulation of space environment conditions of Geostationary orbit of the Earth. The following conditions are supported in the vacuum chamber having volume of 1.2 cubic meters: Vacuum 10-5 Torr. (1.3 × 10-3 Pa), electron beam with energy up to 8 MeV, temperatures from -150°C to +150°C and solar ultraviolet radiation. The peculiarity of this equipment is the possibility of analyzing complex simultaneous influence of mentioned above 4 factors on the sample and in-situ direct measurement of sample parameters under irradiation which provides almost real conditions. Silicon single crystals used in space environment were tested in the vacuum chamber and new results were received having scientific and applied interest. It was shown, particularly, that the electro-conductivity of silicon samples has higher value at in-situ condition than ex-situ after irradiation.
文摘The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.
