4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction,heat sink and mechanical sealing.Nucleation plays a critical role in the deposition of the diam...4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction,heat sink and mechanical sealing.Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides.Nevertheless,as a typical polar material,the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood yet.In this contribution,nucleation of diamond was performed on the carbon-and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition device.The nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the silicon-face.Transmission electron microscopy verifies that there are high density diamond nuclei on the interface between the carbon-face and the diamond film,which is different from columnar diamond growth structure on the silicon-face.Transition state theory calculation reveals that the unprecedented distinction of the nucleation density between the carbon-face and the silicon-face is attributed to different desorption rates of the absorbed hydrocarbon radicals.In addition,kinetic model simulations demonstrate that it is more difficult to form CH2(s)-CH2(s)dimers on silicon-faces than carbon-faces,resulting in much lower nucleation densities on silicon-faces.展开更多
基金the National Key Research and Development Project(No.2017YFE0128600)Ningbo 3315 Innovation Team(No.2019A-18-C)+9 种基金Science and Technology Innovation 2025 Major Project of Ningbo(No.2018023)National Defense Key Laboratory Fund(No.6142807180511)Innovation Funding of State Oceanic Administration(No.NBHY-2017-Z3)Ningbo Industrial Technology Innovation Project(No.2016B10038)‘13th Five-Year’Equipment Pre-research Sharing Project(No.E1710161)‘Key Talents’Senior Engineer Project of Ningbo Institute of Materials Technology and Engineeringthe financial support of CONICYT in the project Fondecyt 11180121the financial support given the VID in the framework of U-IniciaUI013/2018 and the academic direction of the University of Chilefinancial support from the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University(Faculty Grant SFO Mat LiU No.200900971)the Swedish Research Council(VR)。
文摘4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction,heat sink and mechanical sealing.Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides.Nevertheless,as a typical polar material,the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood yet.In this contribution,nucleation of diamond was performed on the carbon-and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition device.The nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the silicon-face.Transmission electron microscopy verifies that there are high density diamond nuclei on the interface between the carbon-face and the diamond film,which is different from columnar diamond growth structure on the silicon-face.Transition state theory calculation reveals that the unprecedented distinction of the nucleation density between the carbon-face and the silicon-face is attributed to different desorption rates of the absorbed hydrocarbon radicals.In addition,kinetic model simulations demonstrate that it is more difficult to form CH2(s)-CH2(s)dimers on silicon-faces than carbon-faces,resulting in much lower nucleation densities on silicon-faces.
