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Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions
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作者 Qingwei Fu Kaiyuan Zhou +8 位作者 Lina Chen Yongbing Xu Tiejun Zhou Dunhui Wang kequn chi Hao Meng Bo Liu Ronghua Liu Youwei Du 《Chinese Physics Letters》 SCIE CAS CSCD 2020年第11期98-103,共6页
We report a perpendicular magnetic tunnel junction(p MTJ)cell with a tunnel magnetoresistance(TMR)ratio of nearly 200%at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL)and a synthetic antiferromagne... We report a perpendicular magnetic tunnel junction(p MTJ)cell with a tunnel magnetoresistance(TMR)ratio of nearly 200%at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL)and a synthetic antiferromagnetic(SAF)multilayer[Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL).The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop.The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than that of FL.The reason is related to the interlayer exchange coupling(IEC)through a moderately thick Ta spacer layer among SAF-RLs,which generates a moderate and negative bias magnetic field on Co Fe B of RL.However,the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics. 展开更多
关键词 dynamics. MAGNETIZATION negligible
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