Determination of the Base Optimum Thickness of Back Illuminated (n+/p/p+) Bifacial Silicon Solar Cell, by Help of Diffusion Coefficient at Resonance Frequency

The bifacial silicon solar cell subjected to a magnetic field, is illuminated by the back side by a monochromatic light in frequency modulation, with high absorption, At minority carriers diffusion coefficient resonance frequency, a graphical study of the expressions of recombination velocity on the rear side is carried out. The optimum thickness of the base of the bifacial solar cell is deduced for each resonance frequency.

AC Back Surface Recombination Velocity as Applied to Optimize the Base Thickness under Temperature of an (n+-p-p+) Bifacial Silicon Solar Cell, Back Illuminated by a Light with Long Wavelength

The bifacial silicon solar cell, placed at temperature (T) and illuminated from the back side by monochromatic light in frequency modulation (ω), is studied from the frequency dynamic diffusion equation, relative to the density of excess minority carriers in the base. The expressions of the dynamic recombination velocities of the minority carriers on the rear side of the base Sb1(D(ω, T);H) and Sb2(α, D(ω, T);H), are analyzed as a function of the dynamic diffusion coefficient (D(ω, T)), the absorption coefficient (α(λ)) and the thickness of the base (H). Thus their graphic representation makes it possible to go up, to the base optimum thickness (Hopt(ω, T)), for different temperature values and frequency ranges of modulation of monochromatic light, of strong penetration. The base optimum thickness (Hopt(ω, T)) decreases with temperature, regardless of the frequency range and allows the realization of the solar cell with few material (Si).

Back Illuminated N/P/P⁺Bifacial Silicon Solar Cell under Modulated Short-Wavelength: Determination of Base Optimum Thickness

A bifacial silicon solar cell under monochromatic illumination in frequency modulation by the rear side is being studied for the optimization of base thickness. The density of photogenerated carriers in the base is obtained by resolution of the continuity equation, with the help of boundary conditions at the junction surface (n+/p) and the rear face (p/p+) of the base. For a short wavelength corresponding to a high absorption coefficient, the AC photocurrent density is calculated and represented according to the excess minority carrier’s recombination velocity at the junction, for different modulation frequency values. The expression of the AC recombination velocity of excess minority carriers at the rear surface of the base of the solar cell is then deduced, depending on both, the absorption coefficient of the silicon material and the thickness of the base. Compared to the intrinsic AC recombination velocity, the optimal thickness is extracted and modeled in a mathematical relationship, as a decreasing function of the modulated frequency of back illumination. Thus under these operating conditions, a maximum short-circuit photocurrent is obtained and a low-cost bifacial solar cell can be achieved by reducing material (Si) to elaborate the base thickness.

AC Back Surface Recombination Velocity in n⁺-p-p⁺Silicon Solar Cell under Monochromatic Light and Temperature

Excess minority carrier’s diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of monochromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n+/p) and back surface (p+/p), the AC expression of the excess minority carriers’ density δ (T, ω) is determined. The AC density of photocurrent Jph (T, ω) is represented versus recombination velocity at the junction for different values of the temperature. The expression of the AC back surface recombination velocity Sb of minority carriers is deduced depending on the frequency of modulation, temperature, the electronic parameters (D (ω)) and the thickness of the base. Bode and Nyquist diagrams are used to analyze it.

Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n+/p/p+) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (Topt). For this same magnetic field, the diffusion coeffi-cient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ωc). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n+/p/p+), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.