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Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors 被引量:2
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作者 Sishir Bhowmick khairul alam 《Nano-Micro Letters》 SCIE EI CAS 2010年第2期83-88,共6页
The effects of source-drain underlaps on the performance of a top gate silicon nanowire on insulator transistor are studied using a three dimensional(3D) self-consistent Poisson-Schrodinger quantum simulation. Voltage... The effects of source-drain underlaps on the performance of a top gate silicon nanowire on insulator transistor are studied using a three dimensional(3D) self-consistent Poisson-Schrodinger quantum simulation. Voltage-controlled tunnel barrier is the device transport physics. The off current, the on/off current ratio, and the inverse subthreshold slope are improved while the on current is degraded with underlap. The physics behind this behavior is the modulation of a tunnel barrier with underlap. The underlap primarily affects the tunneling component of drain current. About 50% contribution to the gate capacitance comes from the fringing electric fields emanating from the gate metal to the source and drain. The gate capacitance reduces with underlap, which should reduce the intrinsic switching delay and increase the intrinsic cut-off frequency. However, both the on current and the transconductance reduce with underlap, and the consequence is the increase of delay and the reduction of cut-off frequency. 展开更多
关键词 Silicon nanowire Insulator transistors Source-drain
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Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied
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作者 Md.Abdul Wahab khairul alam 《Nano-Micro Letters》 SCIE EI CAS 2010年第2期126-133,共8页
Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-dra... Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type. 展开更多
关键词 Zero-Schottky-barrier Doped contact STRAIN Inverse subthreshold slope Intrinsic cut-off frequency
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Effect of Tillage and Residue Retention on Soil Properties and Crop Yields in Wheat-Mungbean-Rice Crop Rotation under Subtropical Humid Climate
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作者 Nazmus Salahin khairul alam +3 位作者 Abu Taher Mohammad Anwarul Islam Mondol Mahammad Shariful Islam Md. Harunur Rashid Muhammad Azizal Hoque 《Open Journal of Soil Science》 2017年第1期1-17,共17页
The effects of conservation agriculture (CA) practices on soil properties along with crop yields of rice-based triple cropping systems have not been adequately assessed in Bangladesh. An experiment was conducted at Ba... The effects of conservation agriculture (CA) practices on soil properties along with crop yields of rice-based triple cropping systems have not been adequately assessed in Bangladesh. An experiment was conducted at Bangladesh Agricultural Research Institute, Gazipur, Bangladesh from 2009 to 2012 to assess the effects of tillage practices and crop residue retention on soil physical properties, soil organic carbon (SOC) and crop yields in a wheat-mungbean-rice system. Treatments consisted of three tillage practices (MT: minimum tillage;CT: conventional tillage and DT: deep tillage) and eight levels of crop residue management (S0—no residues retention, Sr—retention of 30 cm rice straw, Sm—whole mungbean stover retention, SW—30 cm wheat straw retention, Smr—whole mungbean stover & 30 cm rice straw retention, Srw—30 cm rice & wheat straw retention, Smw—whole mungbean stover & 30 cm wheat straw retention and Swrm—30 cm wheat and rice straw along with whole mungbean stover retention) were applied in split plot design with three replications. Bulk density (BD) and porosity responded positively to MT and increased residue retention of all crops (p > 0.05). Minimum tillage and Swrm also significantly accumulated SOC (p < 0.05;0.38% higher than DT with no residue retention) and retained soil moisture (p < 0.05). Minimum tillage practice performed better in upland crops (p < 0.05;wheat & mungbean yields) and CT outperformed MT in wetland rice crop (p < 0.05). The grain and straw yields of wheat and rice were also influenced by previous crop residue retentions (p < 0.05). The results, therefore, suggested that increased residue retention with minimum tillage practices improved soil properties and yield of upland crops but with deeper tillage practices consistently maintained wetland rice production. 展开更多
关键词 CROPPING System RESIDUE RETENTION SOIL Moisture SOIL Organic Carbon (SOC) TILLAGE Practices
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Optimization of Heat Spreader Design for Electronic Cooling
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作者 khairul alam Xiaoping Shen Rahat Taposh 《Computer Technology and Application》 2013年第2期105-110,共6页
关键词 设计优化 散热片 电子冷却 对流换热 集成电路 封装密度 延伸表面 几何形状
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