Porous silicon (PS) was fabricated by laser-induced etching (LIE) process. The objective of this study is to investigate the selected LIE parameters to control size and shape of nanostructures,which are considered imp...Porous silicon (PS) was fabricated by laser-induced etching (LIE) process. The objective of this study is to investigate the selected LIE parameters to control size and shape of nanostructures,which are considered important factors in semiconductor device applications. Photoluminescence output intensity becomes stronger due to the increase in the number of emitted photons on the porous surface. There is a dramatic increase in photoluminescence intensity due to the increase of porosity as a function of laser power density. The increase in electrolyte concentration is an important parameter to accelerate the dissolution reaction on the interface layer between the electrolyte solution and wafer surface. PS spectra displayed a stronger Raman intensity than crystalline bulk Si;also the PS spectrum was shifted and broadened as a function of LIE parameters.展开更多
文摘Porous silicon (PS) was fabricated by laser-induced etching (LIE) process. The objective of this study is to investigate the selected LIE parameters to control size and shape of nanostructures,which are considered important factors in semiconductor device applications. Photoluminescence output intensity becomes stronger due to the increase in the number of emitted photons on the porous surface. There is a dramatic increase in photoluminescence intensity due to the increase of porosity as a function of laser power density. The increase in electrolyte concentration is an important parameter to accelerate the dissolution reaction on the interface layer between the electrolyte solution and wafer surface. PS spectra displayed a stronger Raman intensity than crystalline bulk Si;also the PS spectrum was shifted and broadened as a function of LIE parameters.
