Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence and Hall-effect measurements. The crystallinity of GaAs epilayers grown on Si substrate is signif...Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence and Hall-effect measurements. The crystallinity of GaAs epilayers grown on Si substrate is significantly affected by the substrate orientation and the growth method. The photoelectric properties of GaAs epilayers grown on Si (211) substrates deposited by using a two-step growth method are improved. These results indicate that GaAs epilayers grown on Si (100) and Si (211) substrates by using two-step growth method are promising for potential applications in high-speed and high-frequency photoelectric devices.展开更多
基金National Natural Science Foundation of China(10274026) Korea Science and Engineering Foundation of theQuantum-functional Semiconductor Research Center of Dongguk University
文摘Fabrication of GaAs/Si heterostructures and their photoelectric properties are investigated by Raman, photoluminescence and Hall-effect measurements. The crystallinity of GaAs epilayers grown on Si substrate is significantly affected by the substrate orientation and the growth method. The photoelectric properties of GaAs epilayers grown on Si (211) substrates deposited by using a two-step growth method are improved. These results indicate that GaAs epilayers grown on Si (100) and Si (211) substrates by using two-step growth method are promising for potential applications in high-speed and high-frequency photoelectric devices.
