Photovoltaic solar thin films zinc telluride studies on chemically deposited have been carried out to assess its suitability for use in <span style="white-space:normal;font-family:;" "=""&g...Photovoltaic solar thin films zinc telluride studies on chemically deposited have been carried out to assess its suitability for use in <span style="white-space:normal;font-family:;" "="">the </span><span style="white-space:normal;font-family:;" "="">conversion of so</span><span style="white-space:normal;font-family:;" "="">lar energy to electrical energy. The configuration of fabricated cell is n-ZnTe| NaOH (0.1M) + S (0.1M) + Na<sub>2</sub>S (0.1M)|C<sub>(graphite)</sub>. The study shows that ZnTe thin films are n-type conductivity. The junction ideality factor was found to be 2.87. The flat band potential is found to be </span><span style="white-space:normal;"><span style="font-family:;" "="">-</span></span><span style="white-space:normal;font-family:;" "="">0.652 V. The barrier height value was found to be 0.583 eV. The study of </span><span style="white-space:normal;font-family:;" "="">the </span><span style="white-space:normal;font-family:;" "="">power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 25.6 μA, 24.86% and 0.49%, respectively. The photovoltaic cell characterization of the thin films is carried out by studying current</span><span style="white-space:normal;font-family:;" "="">-</span><span style="white-space:normal;font-family:;" "="">voltage characteristics in dark, capacitance</span><span style="white-space:normal;font-family:;" "="">-</span><span style="white-space:normal;font-family:;" "="">voltage in dark, barrier height measurements, power output characteristics.</span>展开更多
文摘Photovoltaic solar thin films zinc telluride studies on chemically deposited have been carried out to assess its suitability for use in <span style="white-space:normal;font-family:;" "="">the </span><span style="white-space:normal;font-family:;" "="">conversion of so</span><span style="white-space:normal;font-family:;" "="">lar energy to electrical energy. The configuration of fabricated cell is n-ZnTe| NaOH (0.1M) + S (0.1M) + Na<sub>2</sub>S (0.1M)|C<sub>(graphite)</sub>. The study shows that ZnTe thin films are n-type conductivity. The junction ideality factor was found to be 2.87. The flat band potential is found to be </span><span style="white-space:normal;"><span style="font-family:;" "="">-</span></span><span style="white-space:normal;font-family:;" "="">0.652 V. The barrier height value was found to be 0.583 eV. The study of </span><span style="white-space:normal;font-family:;" "="">the </span><span style="white-space:normal;font-family:;" "="">power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 25.6 μA, 24.86% and 0.49%, respectively. The photovoltaic cell characterization of the thin films is carried out by studying current</span><span style="white-space:normal;font-family:;" "="">-</span><span style="white-space:normal;font-family:;" "="">voltage characteristics in dark, capacitance</span><span style="white-space:normal;font-family:;" "="">-</span><span style="white-space:normal;font-family:;" "="">voltage in dark, barrier height measurements, power output characteristics.</span>