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A 0.19 ppm/°C bandgap reference circuit with high-PSRR 被引量:3
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作者 Jing Leng Yangyang Lu +5 位作者 Yunwu Zhang huan Xu kongsheng hu Zhicheng Yu Weifeng Sun Jing Zhu 《Journal of Semiconductors》 EI CAS CSCD 2018年第9期88-94,共7页
A high-order curvature-compensated CMOS bandgap reference(BGR) topology with a low temperature coefficient(TC) over a wide temperature range and a high power supply reject ratio(PSRR) is presented.High-order cor... A high-order curvature-compensated CMOS bandgap reference(BGR) topology with a low temperature coefficient(TC) over a wide temperature range and a high power supply reject ratio(PSRR) is presented.High-order correction is realized by incorporating a nonlinear current INL, which is generated by ?V_(GS) across resistor into current generated by a conventional first-order current-mode BGR circuit. In order to achieve a high PSRR over a broad frequency range, a voltage pre-regulating technique is applied. The circuit was implemented in CSMC 0.5 μm 600 V BCD process. The experimental results indicate that the proposed topology achieves TC of0.19 ppm/°C over the temperature range of 165 °C(-40 to 125 °C), PSRR of-123 d B @ DC and-56 d B @ 100 k Hz. In addition, it achieves a line regulation performance of 0.017%/V in the supply range of 2.8–20 V. 展开更多
关键词 bandgap reference (BGR) temperature coefficient (TC) power supply rejection ratio (PSRR)
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