The five -layer asymmetric coupled quantum well ( FACQW) , which is one of the potential -tailored quantum wells, is expected to show very large electrorefrac live index cha nge in a wideband transpar ency region far ...The five -layer asymmetric coupled quantum well ( FACQW) , which is one of the potential -tailored quantum wells, is expected to show very large electrorefrac live index cha nge in a wideband transpar ency region far from the absorption edge. Characteristics of the FACQW and its application to compact, ultrafast , low voltage optical modul ators and switches are dis cussed.展开更多
An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is expected to show very large electrorefractive index change . n in a wideband transparency region. Band structures of the FACQW are analyzed with L...An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is expected to show very large electrorefractive index change . n in a wideband transparency region. Band structures of the FACQW are analyzed with Luttinger-Kohn Hamiltonian. The electrorefractive characteristics of the FACQW are discussed.展开更多
文摘The five -layer asymmetric coupled quantum well ( FACQW) , which is one of the potential -tailored quantum wells, is expected to show very large electrorefrac live index cha nge in a wideband transpar ency region far from the absorption edge. Characteristics of the FACQW and its application to compact, ultrafast , low voltage optical modul ators and switches are dis cussed.
文摘An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) is expected to show very large electrorefractive index change . n in a wideband transparency region. Band structures of the FACQW are analyzed with Luttinger-Kohn Hamiltonian. The electrorefractive characteristics of the FACQW are discussed.
