Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy ind...Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.展开更多
文摘Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.
