By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La_(0.7)Sr_(0.3)MnO_(3) thin films grown onto flat and vicinal LaAlO_(3)(001)single cryst...By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La_(0.7)Sr_(0.3)MnO_(3) thin films grown onto flat and vicinal LaAlO_(3)(001)single crystal substrates.Consistent with prior studies,the crosshatch topography was observed first by dynamical force microscopy as the epi-stain started to release with increasing film thickness.Second,by using conductive atomic force microscopy(CAFM),conductive crosshatch and dots(locally aligned or random)were unravelled,however,not all of which necessarily coincided with that shown in the in situ atomic force microscopy.Furthermore,the current-voltage responses were probed by CAFM,revealing the occurrence of threshold and/or memristive switchings.Our results demonstrate that the resistive switching relies on the evolution of the local profile and concentration of oxygen vacancies,which,in the crosshatched films,are modulated by both the misfit and threading dislocations.展开更多
Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes(LEDs) needs to be further quantitatively clarified. By incorporating current ...Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes(LEDs) needs to be further quantitatively clarified. By incorporating current crowding effect(CCE) into the conventional ABC model, we have theoretically and directly correlated the current diffusion and the internal quantum efficiency(IQE), light extraction efficiency(LEE), and external quantum efficiency(EQE) droop of the lateral LEDs.However, questions still exist for the vertical LEDs(V-LEDs). Here firstly the current diffusion length L_s(I) and L_s(II) have been clarified. Based on this, the influence of CCE on the EQE, IQE, and LEE of V-LEDs were investigated. Specifically to our V-LEDs with moderate series resistivity, L_s(III) was developed by combining L_s(I) and L_s(II), and the CCE effect on the performance of V-LEDs was investigated. The wall-plug efficiency(WPE) of V-LEDs ware investigated finally. Our works provide a deep understanding of the current diffusion status and the correlated efficiency droop in V-LEDs, thus would benefit the V-LEDs' chip design and further efficiency improvement.展开更多
基金funded by the Science Center of the National Science Foundation of China(Grant No.52088101)the National Natural Science Foundation of China(Grant Nos.11474342 and11174353)+2 种基金the National Key Research and Development Program of Chinathe Strategic Priority Research Program B of the Chinese Academy of Sciencessupported in part by the beamline 08U1A of SSRF。
文摘By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La_(0.7)Sr_(0.3)MnO_(3) thin films grown onto flat and vicinal LaAlO_(3)(001)single crystal substrates.Consistent with prior studies,the crosshatch topography was observed first by dynamical force microscopy as the epi-stain started to release with increasing film thickness.Second,by using conductive atomic force microscopy(CAFM),conductive crosshatch and dots(locally aligned or random)were unravelled,however,not all of which necessarily coincided with that shown in the in situ atomic force microscopy.Furthermore,the current-voltage responses were probed by CAFM,revealing the occurrence of threshold and/or memristive switchings.Our results demonstrate that the resistive switching relies on the evolution of the local profile and concentration of oxygen vacancies,which,in the crosshatched films,are modulated by both the misfit and threading dislocations.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB0406702)the Professorship Start-up Funding(Grant No.217056)+2 种基金the Innovation-Driven Project of Central South University,China(Grant No.2018CX001)the Project of State Key Laboratory of High-Performance Complex Manufacturing,Central South University,China(Grant No.ZZYJKT2018-01)Guangzhou Science&Technology Project of Guangdong Province,China(Grant Nos.201704030106 and 2016201604030035)
文摘Current diffusion is an old issue, nevertheless, the relationship between the current diffusion and the efficiency of light emitting diodes(LEDs) needs to be further quantitatively clarified. By incorporating current crowding effect(CCE) into the conventional ABC model, we have theoretically and directly correlated the current diffusion and the internal quantum efficiency(IQE), light extraction efficiency(LEE), and external quantum efficiency(EQE) droop of the lateral LEDs.However, questions still exist for the vertical LEDs(V-LEDs). Here firstly the current diffusion length L_s(I) and L_s(II) have been clarified. Based on this, the influence of CCE on the EQE, IQE, and LEE of V-LEDs were investigated. Specifically to our V-LEDs with moderate series resistivity, L_s(III) was developed by combining L_s(I) and L_s(II), and the CCE effect on the performance of V-LEDs was investigated. The wall-plug efficiency(WPE) of V-LEDs ware investigated finally. Our works provide a deep understanding of the current diffusion status and the correlated efficiency droop in V-LEDs, thus would benefit the V-LEDs' chip design and further efficiency improvement.
