Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from ...Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon(Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of^9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps, and25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.展开更多
This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the devices.Yields over 97%were obta...This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the devices.Yields over 97%were obtained for three different compact photodiodes(10×10μm and intrinsic region width of 0.5,0.7,and 1μm)within the same batch of three wafers.Those photodiodes exhibit low dark currents under reverse bias with median values of 74,62,and 61 nA for intrinsic widths of 0.5,0.7,and 1μm,respectively,over a full wafer.Responsivities up to 0.78 A∕W at 1550 nm and zero bias were measured.Zero bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to−13.9 and−12.3 dBm,respectively.展开更多
基金H2020 European Research Council(ERC)(ERC POPSTAR No.647342)
文摘Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon(Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of^9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps, and25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.
文摘This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the devices.Yields over 97%were obtained for three different compact photodiodes(10×10μm and intrinsic region width of 0.5,0.7,and 1μm)within the same batch of three wafers.Those photodiodes exhibit low dark currents under reverse bias with median values of 74,62,and 61 nA for intrinsic widths of 0.5,0.7,and 1μm,respectively,over a full wafer.Responsivities up to 0.78 A∕W at 1550 nm and zero bias were measured.Zero bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to−13.9 and−12.3 dBm,respectively.
