Arc deposition, a widely used surface coating technique, has disadvantages such as large droplet size and high deposition temperature. Recent trend in its renovation is the introduction of pulsed bias at the. substrat...Arc deposition, a widely used surface coating technique, has disadvantages such as large droplet size and high deposition temperature. Recent trend in its renovation is the introduction of pulsed bias at the. substrate. The present paper attempts to describe the deposition process of TiN films using this technique with emphasis laid on the understanding of the basic problems such as discharge plasma properties, temperature calculation, and droplet size reduction. We show that this technique improves the film micro structure and quality, lowers deposition temperature, and allows coatings on insulating substrates. After analyzing load current oscillation behaviors, we have determined that the plasma load is of capacitance nature due to plasma sheath and that it is equivalent to a circuit element consisting of parallel capacitance and resistance. At last, we point out the remaining problems and future development of the pulsed-bias arc deposition technique.展开更多
基金This work was supported by the National Natural Science Foundation of China (Grant No.50071017).
文摘Arc deposition, a widely used surface coating technique, has disadvantages such as large droplet size and high deposition temperature. Recent trend in its renovation is the introduction of pulsed bias at the. substrate. The present paper attempts to describe the deposition process of TiN films using this technique with emphasis laid on the understanding of the basic problems such as discharge plasma properties, temperature calculation, and droplet size reduction. We show that this technique improves the film micro structure and quality, lowers deposition temperature, and allows coatings on insulating substrates. After analyzing load current oscillation behaviors, we have determined that the plasma load is of capacitance nature due to plasma sheath and that it is equivalent to a circuit element consisting of parallel capacitance and resistance. At last, we point out the remaining problems and future development of the pulsed-bias arc deposition technique.
