An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature(LT)GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor depositio...An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature(LT)GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition.The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated.It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer,ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.展开更多
基金Supported by the National Science Fund for Distinguished Young Scholars(No 60925017)the National Natural Science Foundation of China(Nos 10990100,60836003 and 60976045)Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-Discipline Foundation.
文摘An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature(LT)GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition.The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated.It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer,ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.
