A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approxima...A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations.It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement.Without any empirical fitting parameters,the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.展开更多
基金Supported by the Fund of Liaoning Province Education Department under Grant No L2012028.
文摘A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations.It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement.Without any empirical fitting parameters,the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.
