An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition.The laser diode ar...An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition.The laser diode array consists of five emitter stripes which share common electrodes on one laser chip.The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width.The laser diode array emits at the wavelength of 409 nm,which is located in the blue-violet region,and the threshold current is 2.9 A.The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.展开更多
基金Supported by the National Natural Science Foundation of China for Distinguished Young Scholars under Grant No 60925017the National Natural Science Foundation of China under Grant Nos 61223005,10990100,60836003 and 61176126Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-Discipline Foundation.
文摘An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition.The laser diode array consists of five emitter stripes which share common electrodes on one laser chip.The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width.The laser diode array emits at the wavelength of 409 nm,which is located in the blue-violet region,and the threshold current is 2.9 A.The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.
