It was observed with transmission electron microscopy in the In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP heterostructure that misfit dislocation lines deviate from the<110>directions at a certa...It was observed with transmission electron microscopy in the In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP heterostructure that misfit dislocation lines deviate from the<110>directions at a certain angle depending on the indium content x.Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the Ⅲ-Ⅳ ternary compounds.展开更多
The population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence(PL).Three well resolved PL peaks centred ...The population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence(PL).Three well resolved PL peaks centred at 0.737,0.908,and 0.980eV are observed,which are attributed to the transitions from the lowest three electron subbands to the n=1 heavy-hole subband.The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation.Thanks to the presence of Fermi cutoff,the population ratio of these three subbands can be estimated.Temperature and excitation-dependent luminescences are also analyzed.展开更多
文摘It was observed with transmission electron microscopy in the In_(0.52)Al_(0.48)As/In_(x)Ga_(1-x)As/In_(0.52)Al(0.48)As/InP heterostructure that misfit dislocation lines deviate from the<110>directions at a certain angle depending on the indium content x.Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on the misfit dislocations in the interface between the Ⅲ-Ⅳ ternary compounds.
基金Supported by the National Natural Science Foundation of China.
文摘The population of the third(n=3)two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence(PL).Three well resolved PL peaks centred at 0.737,0.908,and 0.980eV are observed,which are attributed to the transitions from the lowest three electron subbands to the n=1 heavy-hole subband.The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation.Thanks to the presence of Fermi cutoff,the population ratio of these three subbands can be estimated.Temperature and excitation-dependent luminescences are also analyzed.
