GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significan...GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.展开更多
A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at a wavelength of 1.3μm with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE-PD was gr...A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at a wavelength of 1.3μm with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE-PD was grown by molecular beam epitaxy using a homemade ion-removed dc plasma cell as a nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100μm diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3 dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18nm with the angle of incident light was observed.展开更多
基金Supported by the Major State Basic Research Program under Grant No.G2000036603the National Natural Science Foundation of China under Grant Nos.69896260 and 69988005.
文摘GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.
基金Supported by the Major State Basic Research Program under Grant No.G2000036603the National Natural Science Foundation of China under Grant Nos.69896260,69988005 and 69976007。
文摘A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at a wavelength of 1.3μm with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE-PD was grown by molecular beam epitaxy using a homemade ion-removed dc plasma cell as a nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100μm diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3 dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18nm with the angle of incident light was observed.
