The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorph...The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorphic In_(0.24)GaAs/GaAs MQW are designed and fabricated successfully,where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm.The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.展开更多
基金the National Natural Science Foundation of China under Grant Nos 61274069,61176053 and 61021003the National High-Technology Research and Development Program of China under Grant No 2012AA012202the National Basic Research Program of China under Grant Nos 2012CB933503 and 2013CB932904.
文摘The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorphic In_(0.24)GaAs/GaAs MQW are designed and fabricated successfully,where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm.The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.
