Silicon photonic devices based on complementary-metal-oxide-semiconductor(CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration,high speed modulatio...Silicon photonic devices based on complementary-metal-oxide-semiconductor(CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration,high speed modulation and switching,and efficient off-chip optical coupling.This paper presents the recent progress on fast silicon optical modulation,wavelength-insensitive optical switching and efficient optical coupling techniques in our group.Several CMOS-compatible silicon optical couplers with different structures have been developed,showing the highest coupling efficiency of 65%.Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized.Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s-1.展开更多
基金supported by the National Basic Research Program of China (Grant Nos. 2011CB301701,2012CB933502 and 2012CB933504)the National Natural Science Foundation of China (Grant Nos. 60877036 and 61107048)+1 种基金the Chinese Academy of Sciences for a fellowship for young international scientists (Grant No. 2011Y1GB07)the China Postdoctoral Science Foundation (Grant No. 2011M500372)
文摘Silicon photonic devices based on complementary-metal-oxide-semiconductor(CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration,high speed modulation and switching,and efficient off-chip optical coupling.This paper presents the recent progress on fast silicon optical modulation,wavelength-insensitive optical switching and efficient optical coupling techniques in our group.Several CMOS-compatible silicon optical couplers with different structures have been developed,showing the highest coupling efficiency of 65%.Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized.Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s-1.
