An up to date most detailed information of H(Hole)as well as E(Electron)traps produced by low dose(10^(11)cm^(-2))boron and phosphorus implantation in n-Si and their thermal annealing behaviours are reported.For the f...An up to date most detailed information of H(Hole)as well as E(Electron)traps produced by low dose(10^(11)cm^(-2))boron and phosphorus implantation in n-Si and their thermal annealing behaviours are reported.For the first time,two hole traps H2(0.62),H3(0.49)of huge concentrations were detected in B^(+)implanted n-Si.They are tentatively assigned as boron related acceptors.H2(0.51)of huge concentration were detected in P^(+)implanted n-Si.Other three hole traps H1(0.63),H4(0.37)and H5(0.15)were detected in both B^(+)and P^(+)implanted n-Si;they are thus unrelated to boron.E traps are also reported;some of these E traps are consistent with previous reports and some are new.展开更多
文摘An up to date most detailed information of H(Hole)as well as E(Electron)traps produced by low dose(10^(11)cm^(-2))boron and phosphorus implantation in n-Si and their thermal annealing behaviours are reported.For the first time,two hole traps H2(0.62),H3(0.49)of huge concentrations were detected in B^(+)implanted n-Si.They are tentatively assigned as boron related acceptors.H2(0.51)of huge concentration were detected in P^(+)implanted n-Si.Other three hole traps H1(0.63),H4(0.37)and H5(0.15)were detected in both B^(+)and P^(+)implanted n-Si;they are thus unrelated to boron.E traps are also reported;some of these E traps are consistent with previous reports and some are new.
基金supported by the National Key Research and Development Program of the Ministry of Science and Technology of China (No. 2018YFF0300405)the Fundamental Research Fund for Central Universities of China (No. 2022YB013)。