目的探讨影响接受调强放疗(intensity-modulated radiotherapy,IMRT)的中国肝癌分期(China liver cancer staging,CNLC)Ⅲ期肝细胞癌(hepatocellular carcinoma,HCC)患者预后的危险因素,并建立预后列线图模型。方法收集2012年1月到2021...目的探讨影响接受调强放疗(intensity-modulated radiotherapy,IMRT)的中国肝癌分期(China liver cancer staging,CNLC)Ⅲ期肝细胞癌(hepatocellular carcinoma,HCC)患者预后的危险因素,并建立预后列线图模型。方法收集2012年1月到2021年3月在广西医科大学附属肿瘤医院接受IMRT治疗的CNLCⅢ期HCC患者的临床资料进行回顾性分析。采用单因素和多因素Cox回归分析影响患者预后的独立危险因素。构建列线图模型预测患者1年、2年、3年的总生存率,并采用受试者工作特征(receiver operating characteristic,ROC)曲线和校准曲线评估模型效能。根据Cox模型风险评分的中位数将患者分为高、低风险组,使用Kaplan-Meier法绘制生存曲线图,log-rank检验分析两组的生存差异。结果本研究共纳入250 HCC例患者。多因素Cox回归分析结果显示,肿瘤数目、甲胎蛋白(alpha-fetoprotein,AFP)、血清碱性磷酸酶(alkaline phosphatase,ALP)、血小板(blood platelet,PLT)是CNLCⅢ期HCC患者IMRT预后的独立影响因素(均P<0.05)。列线图模型预测患者1年、2年、3年总生存率的ROC曲线下面积(area under the curve,AUC)分别为0.680(95%CI:0.613~0.748)、0.717(95%CI:0.638~0.796)、0.783(95%CI:0.696~0.871),校准曲线显示预测发生率和实际发生率之间一致性较好。log-rank检验显示,低风险组的总生存期(overall survival,OS)明显优于高风险组(P<0.001)。结论肿瘤数目、AFP、ALP、PLT是影响接受IMRT治疗的CNLCⅢ期HCC患者预后的独立危险因素,基于上述指标建立的列线图模型有助于临床医师对患者预后做出更准确的评估并指导临床个体化治疗。展开更多
We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic light-emitting diodes with and without hole-injection layers (HILs).Two different HIL materials were...We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic light-emitting diodes with and without hole-injection layers (HILs).Two different HIL materials were used:copper phthalocyanine (CuPc) and 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MDTATA).It was found that the half-lives of devices using PC driving modes were different from those of comparable devices using DC driving modes.For the devices without HILs,with CuPc HILs and with MTDATA HILs,the half-lives of the devices were changed by factors of 1.91,1.41 and 0.86,respectively,when operated in PC rather than DC driving modes.Our analysis of the electrical characteristics of the corresponding hole-only devices showed that the number of holes injected into devices was greatly reduced by inserting an m-MTDATA layer compared with other designs.The results indicate that different ratios of injected electrons and holes can be obtained in these devices.Moreover,these ratios play a dominant role in the dependence of the stability of the device on the driving mode.展开更多
文摘目的探讨影响接受调强放疗(intensity-modulated radiotherapy,IMRT)的中国肝癌分期(China liver cancer staging,CNLC)Ⅲ期肝细胞癌(hepatocellular carcinoma,HCC)患者预后的危险因素,并建立预后列线图模型。方法收集2012年1月到2021年3月在广西医科大学附属肿瘤医院接受IMRT治疗的CNLCⅢ期HCC患者的临床资料进行回顾性分析。采用单因素和多因素Cox回归分析影响患者预后的独立危险因素。构建列线图模型预测患者1年、2年、3年的总生存率,并采用受试者工作特征(receiver operating characteristic,ROC)曲线和校准曲线评估模型效能。根据Cox模型风险评分的中位数将患者分为高、低风险组,使用Kaplan-Meier法绘制生存曲线图,log-rank检验分析两组的生存差异。结果本研究共纳入250 HCC例患者。多因素Cox回归分析结果显示,肿瘤数目、甲胎蛋白(alpha-fetoprotein,AFP)、血清碱性磷酸酶(alkaline phosphatase,ALP)、血小板(blood platelet,PLT)是CNLCⅢ期HCC患者IMRT预后的独立影响因素(均P<0.05)。列线图模型预测患者1年、2年、3年总生存率的ROC曲线下面积(area under the curve,AUC)分别为0.680(95%CI:0.613~0.748)、0.717(95%CI:0.638~0.796)、0.783(95%CI:0.696~0.871),校准曲线显示预测发生率和实际发生率之间一致性较好。log-rank检验显示,低风险组的总生存期(overall survival,OS)明显优于高风险组(P<0.001)。结论肿瘤数目、AFP、ALP、PLT是影响接受IMRT治疗的CNLCⅢ期HCC患者预后的独立危险因素,基于上述指标建立的列线图模型有助于临床医师对患者预后做出更准确的评估并指导临床个体化治疗。
基金supported by the National Natural Science Foundation of China (10904122)
文摘We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic light-emitting diodes with and without hole-injection layers (HILs).Two different HIL materials were used:copper phthalocyanine (CuPc) and 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MDTATA).It was found that the half-lives of devices using PC driving modes were different from those of comparable devices using DC driving modes.For the devices without HILs,with CuPc HILs and with MTDATA HILs,the half-lives of the devices were changed by factors of 1.91,1.41 and 0.86,respectively,when operated in PC rather than DC driving modes.Our analysis of the electrical characteristics of the corresponding hole-only devices showed that the number of holes injected into devices was greatly reduced by inserting an m-MTDATA layer compared with other designs.The results indicate that different ratios of injected electrons and holes can be obtained in these devices.Moreover,these ratios play a dominant role in the dependence of the stability of the device on the driving mode.
