The piezoresistive effect of polycrystalline p-type diamond films formed by dc plasma chemical vapour deposition has been investigated.The gauge factor is about 116 at 500 microstrains at room temperature,and strongly...The piezoresistive effect of polycrystalline p-type diamond films formed by dc plasma chemical vapour deposition has been investigated.The gauge factor is about 116 at 500 microstrains at room temperature,and strongly increases with increasing temperature,exceeding that of polycrystalline-and single-silicon.The origin of the piezoresistivity in boron doped polycrystalline diamond films may be ascribed to strain-induced shift of the boron acceptor level and grain boundaries.展开更多
Cubic boron nitride films have been synthesized using thermally assisted rf plasma chemical vapour deposition (CVD) with a tungsten filament in the reactive gasses of B_(2)H_(6) and NH_(3). The films obtained are of g...Cubic boron nitride films have been synthesized using thermally assisted rf plasma chemical vapour deposition (CVD) with a tungsten filament in the reactive gasses of B_(2)H_(6) and NH_(3). The films obtained are of good quality and are characterized by transmission electron microscope, infrared absorption measurement and electron energy loss spectrometry. Experimental results showed that the structure and quality of cubic boron nitride films closely depend on the growth conditions of the films.展开更多
Diamond film have been synthesized by dc plasma chemical vapour deposition(CVD)from a gaseous mixture of acetone and hydrogen gases with a growth rate of 220μm/h.The films obtained have good crystallinity that are ch...Diamond film have been synthesized by dc plasma chemical vapour deposition(CVD)from a gaseous mixture of acetone and hydrogen gases with a growth rate of 220μm/h.The films obtained have good crystallinity that are chaxacte-ized by Raman spectrometry,scanning electron microscopy and x-ray diffraction.X-ray photoelectron spectroscopy analysis have confirmed that diamond nucleation and growth are on SiC rather than on clean Si.The mechanism of high rate growth diamond film have been discussed too.展开更多
文摘The piezoresistive effect of polycrystalline p-type diamond films formed by dc plasma chemical vapour deposition has been investigated.The gauge factor is about 116 at 500 microstrains at room temperature,and strongly increases with increasing temperature,exceeding that of polycrystalline-and single-silicon.The origin of the piezoresistivity in boron doped polycrystalline diamond films may be ascribed to strain-induced shift of the boron acceptor level and grain boundaries.
文摘Cubic boron nitride films have been synthesized using thermally assisted rf plasma chemical vapour deposition (CVD) with a tungsten filament in the reactive gasses of B_(2)H_(6) and NH_(3). The films obtained are of good quality and are characterized by transmission electron microscope, infrared absorption measurement and electron energy loss spectrometry. Experimental results showed that the structure and quality of cubic boron nitride films closely depend on the growth conditions of the films.
文摘Diamond film have been synthesized by dc plasma chemical vapour deposition(CVD)from a gaseous mixture of acetone and hydrogen gases with a growth rate of 220μm/h.The films obtained have good crystallinity that are chaxacte-ized by Raman spectrometry,scanning electron microscopy and x-ray diffraction.X-ray photoelectron spectroscopy analysis have confirmed that diamond nucleation and growth are on SiC rather than on clean Si.The mechanism of high rate growth diamond film have been discussed too.
