Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is...Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is analyzed at communication wavelengths so that the basic operation parameters can decide properly for efficient detection of single photon. The bias voltage has related to the punch-through voltage in combining the cooling technique with synchronization to decrease the dark counts.展开更多
A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and...A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities.Through the experiments,it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction.展开更多
基金National"973"Project(G2001039302) Key S & T Project of Guangdong Province(2003A103405) Key S&T Project of Guangzhou City(1992-2-035-01)
文摘Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is analyzed at communication wavelengths so that the basic operation parameters can decide properly for efficient detection of single photon. The bias voltage has related to the punch-through voltage in combining the cooling technique with synchronization to decrease the dark counts.
文摘A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities.Through the experiments,it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction.
